采用硅基空腔衬底结构的 D 波段自封装低损耗接地共面波导到矩形波导转换器

IF 6.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Zi-Qi Zhang;Xiao-Long Huang;Liang Zhou;Yin-Shan Huang;Cheng-Rui Zhang
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引用次数: 0

摘要

在这项工作中,研究、制造和测量了一种新型 D 波段自封装硅基气腔从接地共面波导到充气矩形波导的过渡。建立并详细分析了等效电路模型,并给出了设计步骤。过渡的计算、模拟和测量 S 参数显示出一定的一致性。在 147 GHz 频率下,拟议过渡器的最小测量插入损耗为 1.1 dB,3 dB 分数带宽为 10.2%。与我们内部的硅基 MEMS 光敏复合膜制造工艺中的先进产品相比,这种过渡器具有低损耗和低剖面的出色性能。它可进一步用于高性能联合雷达通信系统的封装。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A D-Band Self-Packaged Low Loss Grounded Coplanar Waveguide to Rectangular Waveguide Transition With Silicon-Based Air Cavity-Backed Structure
A novel D-band self-packaged silicon-based air cavity-backed transition from grounded coplanar waveguide to air-filled rectangular waveguide was investigated, fabricated, and measured in this work. The equivalent circuit model was established and analyzed in detail, and design procedures are given. The calculated, simulated, and measured S-parameters of the transition show some agreement. The minimum measured insertion loss of the proposed transition is 1.1 dB at 147 GHz with a fractional 3-dB bandwidth of 10.2%. This transition demonstrates outstanding performance of low loss and profile compared with state-of-the art works in our in-house silicon-based MEMS photosensitive composite film fabrication process. It can be further used in a high-performance joint radar communication system in packaging.
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来源期刊
CiteScore
10.70
自引率
0.00%
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审稿时长
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