氮化镓片上系统:突破集成和功能极限

IF 6.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Reza Nikandish
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引用次数: 0

摘要

在这篇文章中,我们从未来的视角介绍了氮化镓集成电路技术,讨论了阻碍发挥氮化镓工艺能力的技术挑战,并提出了突破其集成度和功能极限的建议。我们探讨了当前氮化镓工艺在工艺、电路和系统层面的局限性,并介绍了一些缓解这些局限性的潜在发展。氮化镓电路的最新进展源于对更高性能的追求,这种追求影响了电路和系统架构的创新。一个有前途的解决方案是在采用传统的性能导向设计方法的同时,采用功能导向设计范例。对最先进的氮化镓收发器的回顾表明,大多数收发器仅由功率放大器(PA)、低噪声放大器(LNA)和发射接收(T/R)开关组成。我们提出了有可能重塑高度集成氮化镓系统未来的三个颠覆性方向,包括数字功率放大器、集成传感与通信(ISAC)收发器和封装中的氮化镓-CMOS芯片,并研究了它们的前景和挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
GaN System-on-Chip: Pushing the Limits of Integration and Functionality
In this article, we present a futuristic perspective on GaN integrated circuit technology, discuss technical challenges that hinder leveraging the capabilities of the GaN process, and provide recommendations to push its limits of integration and functionality. We explore the limitations of current GaN processes at the process, circuit, and system levels, and present some potential developments to mitigate these limitations. The most recent progresses in GaN circuits has been inspired by the quest for higher performance, which has influenced innovations in circuit and system architectures. A promising solution is to pursue a functionality-oriented design paradigm in parallel with the traditional performance-oriented design approach . A review of state-of-the-art GaN transceivers indicates that most comprise merely a power amplifier (PA), a low-noise amplifier (LNA), and transmit-receive (T/R) switches. We propose three disruptive directions that potentially can reshape the future of highly integrated GaN systems, including a digital PA, an integrated sensing and communication (ISAC) transceiver, and GaN-CMOS chiplets in package, and investigate their prospects and challenges.
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来源期刊
CiteScore
10.70
自引率
0.00%
发文量
0
审稿时长
8 weeks
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