Yong Lim;Jaehoon Lee;Jongmi Lee;Kwangmin Lim;Seunghyun Oh;Jongwoo Lee
{"title":"使用 8 纳米耐失配和 PVT 变化动态偏置环形放大器的 2.08 mW 64.4-dB SNDR 400-MS/s 流水线 SAR ADC","authors":"Yong Lim;Jaehoon Lee;Jongmi Lee;Kwangmin Lim;Seunghyun Oh;Jongwoo Lee","doi":"10.1109/JSSC.2024.3471915","DOIUrl":null,"url":null,"abstract":"In this article, we introduce a new dynamically biased ring amplifier that is tolerant to mismatch and PVT variation without requiring bias calibration, and we verify it in a 12-bit 400-MS/s pipelined-SAR analog-to-digital converter (ADC), fabricated in an 8-nm FinFET process. Our novel ring amplifier solves the biasing issues inherent in conventional ring amplifiers while maintaining the benefits of high gain, slew-based charging, and nearly rail-to-rail output swing. We also propose a technique to enhance the DC accuracy of a switched-capacitor common-mode feedback (CMFB) without consuming additional power, which we named feedback voltage sampling CMFB. Furthermore, we introduce a full-scale matching residue amplification technique for the prototype pipelined-SAR ADC to utilize the top-plate input sampling for the first-stage SAR ADC, resulting in faster and lower power conversion. The prototype ADC demonstrates the robustness of our dynamically biased ring amplifier to mismatch and PVT variation without any interstage gain, bias, or reference calibration, and achieves 64.4-dB SNDR and 77.6-dB SFDR for a low-frequency input while consuming 2.08 mW. This measured performance is equivalent to Walden and Schreier FoMs of 3.8 fJ/conversion\n<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>\nstep and 174.2 dB, respectively.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"59 12","pages":"4199-4210"},"PeriodicalIF":4.6000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 2.08-mW 64.4-dB SNDR 400-MS/s Pipelined- SAR ADC Using Mismatch and PVT Variation Tolerant Dynamically Biased Ring Amplifier in 8 nm\",\"authors\":\"Yong Lim;Jaehoon Lee;Jongmi Lee;Kwangmin Lim;Seunghyun Oh;Jongwoo Lee\",\"doi\":\"10.1109/JSSC.2024.3471915\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, we introduce a new dynamically biased ring amplifier that is tolerant to mismatch and PVT variation without requiring bias calibration, and we verify it in a 12-bit 400-MS/s pipelined-SAR analog-to-digital converter (ADC), fabricated in an 8-nm FinFET process. Our novel ring amplifier solves the biasing issues inherent in conventional ring amplifiers while maintaining the benefits of high gain, slew-based charging, and nearly rail-to-rail output swing. We also propose a technique to enhance the DC accuracy of a switched-capacitor common-mode feedback (CMFB) without consuming additional power, which we named feedback voltage sampling CMFB. Furthermore, we introduce a full-scale matching residue amplification technique for the prototype pipelined-SAR ADC to utilize the top-plate input sampling for the first-stage SAR ADC, resulting in faster and lower power conversion. The prototype ADC demonstrates the robustness of our dynamically biased ring amplifier to mismatch and PVT variation without any interstage gain, bias, or reference calibration, and achieves 64.4-dB SNDR and 77.6-dB SFDR for a low-frequency input while consuming 2.08 mW. This measured performance is equivalent to Walden and Schreier FoMs of 3.8 fJ/conversion\\n<inline-formula> <tex-math>$\\\\cdot $ </tex-math></inline-formula>\\nstep and 174.2 dB, respectively.\",\"PeriodicalId\":13129,\"journal\":{\"name\":\"IEEE Journal of Solid-state Circuits\",\"volume\":\"59 12\",\"pages\":\"4199-4210\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2024-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Solid-state Circuits\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10710178/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10710178/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 2.08-mW 64.4-dB SNDR 400-MS/s Pipelined- SAR ADC Using Mismatch and PVT Variation Tolerant Dynamically Biased Ring Amplifier in 8 nm
In this article, we introduce a new dynamically biased ring amplifier that is tolerant to mismatch and PVT variation without requiring bias calibration, and we verify it in a 12-bit 400-MS/s pipelined-SAR analog-to-digital converter (ADC), fabricated in an 8-nm FinFET process. Our novel ring amplifier solves the biasing issues inherent in conventional ring amplifiers while maintaining the benefits of high gain, slew-based charging, and nearly rail-to-rail output swing. We also propose a technique to enhance the DC accuracy of a switched-capacitor common-mode feedback (CMFB) without consuming additional power, which we named feedback voltage sampling CMFB. Furthermore, we introduce a full-scale matching residue amplification technique for the prototype pipelined-SAR ADC to utilize the top-plate input sampling for the first-stage SAR ADC, resulting in faster and lower power conversion. The prototype ADC demonstrates the robustness of our dynamically biased ring amplifier to mismatch and PVT variation without any interstage gain, bias, or reference calibration, and achieves 64.4-dB SNDR and 77.6-dB SFDR for a low-frequency input while consuming 2.08 mW. This measured performance is equivalent to Walden and Schreier FoMs of 3.8 fJ/conversion
$\cdot $
step and 174.2 dB, respectively.
期刊介绍:
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.