{"title":"使用四阶谐振器的 33.5-92.6 GHz CMOS 注入锁定分频器","authors":"Guoqing Dong;Yizhu Shen;Sanming Hu","doi":"10.1109/LMWT.2024.3444001","DOIUrl":null,"url":null,"abstract":"This letter presents a novel fourth-order resonator for millimeter-wave (mmW) wideband injection-locked frequency divider (ILFD) in 40-nm CMOS. To operate at high frequencies, such as E-band, and obtain wide locking range (LR) simultaneously, the fourth-order transformer is intentionally designed with high coupling coefficient and low quality factor of secondary coil to achieve a flat and broad impedance response. The measurement results demonstrate an LR of 59.1 GHz from 33.5 to 92.6 GHz, with a fractional bandwidth of 93.7%. The chip features a compact core area of 0.0165 mm2 (\n<inline-formula> <tex-math>$0.0007\\lambda ^{2}$ </tex-math></inline-formula>\n) and consumes 6.18 mW from a 0.6-V voltage supply.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 10","pages":"1190-1193"},"PeriodicalIF":0.0000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 33.5–92.6-GHz CMOS Injection-Locked Frequency Divider Using Fourth-Order Resonator\",\"authors\":\"Guoqing Dong;Yizhu Shen;Sanming Hu\",\"doi\":\"10.1109/LMWT.2024.3444001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a novel fourth-order resonator for millimeter-wave (mmW) wideband injection-locked frequency divider (ILFD) in 40-nm CMOS. To operate at high frequencies, such as E-band, and obtain wide locking range (LR) simultaneously, the fourth-order transformer is intentionally designed with high coupling coefficient and low quality factor of secondary coil to achieve a flat and broad impedance response. The measurement results demonstrate an LR of 59.1 GHz from 33.5 to 92.6 GHz, with a fractional bandwidth of 93.7%. The chip features a compact core area of 0.0165 mm2 (\\n<inline-formula> <tex-math>$0.0007\\\\lambda ^{2}$ </tex-math></inline-formula>\\n) and consumes 6.18 mW from a 0.6-V voltage supply.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"34 10\",\"pages\":\"1190-1193\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10663747/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10663747/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了一种用于毫米波(mmW)宽带注入锁定分频器(ILFD)的新型四阶谐振器,采用 40 纳米 CMOS 工艺制造。为了在 E 波段等高频率下工作并同时获得较宽的锁定范围 (LR),四阶变压器被有意设计成具有高耦合系数和低次级线圈品质因数,以实现平坦而宽广的阻抗响应。测量结果表明,从 33.5 GHz 到 92.6 GHz 的 LR 为 59.1 GHz,分数带宽为 93.7%。该芯片具有 0.0165 mm2 (0.0007 美元/lambda ^{2}$)的紧凑内核面积,0.6 V 电压电源功耗为 6.18 mW。
A 33.5–92.6-GHz CMOS Injection-Locked Frequency Divider Using Fourth-Order Resonator
This letter presents a novel fourth-order resonator for millimeter-wave (mmW) wideband injection-locked frequency divider (ILFD) in 40-nm CMOS. To operate at high frequencies, such as E-band, and obtain wide locking range (LR) simultaneously, the fourth-order transformer is intentionally designed with high coupling coefficient and low quality factor of secondary coil to achieve a flat and broad impedance response. The measurement results demonstrate an LR of 59.1 GHz from 33.5 to 92.6 GHz, with a fractional bandwidth of 93.7%. The chip features a compact core area of 0.0165 mm2 (
$0.0007\lambda ^{2}$
) and consumes 6.18 mW from a 0.6-V voltage supply.