一款低功耗紧凑型 Ku 波段 F 类 VCO,22 纳米 FDSOI 工艺实现 32% 的调谐范围

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Sutton Hathorn;Saeed Mohammadi
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引用次数: 0

摘要

这项研究提出了一种 F 类压控振荡器 (VCO),该振荡器针对小面积和低功耗进行了优化。VCO 采用变压器磁芯,在基频三次谐波处产生额外的谐振峰,从而改善了相位噪声性能。变压器可提供无源电压增益,从而降低电源电压和功耗。VCO 的面积仅为 0.022 平方毫米,采用 22 纳米全耗尽绝缘体上硅(FDSOI)工艺实现,在 11.4 GHz 频率下实现了峰值面积优越性(text {FOM}_{A}=189~text {dB}$)。调谐范围为 11.3-15.6 GHz,电源电压为 0.45 V 时的峰值功耗为 6.6 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low-Power Compact Ku-Band Class-F VCO With 32% Tuning Range in 22-nm FDSOI
This work presents a class-F voltage controlled oscillator (VCO) optimized for small area and low power. The VCO uses a transformer core to create an additional resonant peak at the third harmonic of the fundamental frequency and therefore improves phase noise performance. The transformer provides passive voltage gain which in turn allows for a reduction in supply voltage and power consumption. The VCO, with an area of only 0.022 mm2, was implemented in 22-nm fully depleted silicon on insulator (FDSOI) and achieves a peak area figure of merit $\text {FOM}_{A}=189~\text {dB}$ at 11.4 GHz. With a tuning range of 11.3–15.6 GHz, the peak power consumption is 6.6 mW at a supply voltage of 0.45 V.
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