多晶 FAPbI3 薄膜的结构和激子特性及其光电响应。

IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yi-Chun Huang, I-Jane Yen, Chih-Hsien Tseng, Hui-Yu Wang, Anjali Chandel, Sheng Hsiung Chang
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引用次数: 0

摘要

由于具有光活性和化学稳定的特性,有人提出用基于法镨(FA)的过氧化物取代三碘化铅(MAPbI3)过氧化物,作为光伏电池的光吸收层。然而,由于裂纹缺陷的存在,未掺杂的 FAPbI3 薄膜仍会发生从光活性 -FAPbI3 到非包晶石 -FAPbI3 的晶体相变,从而降低光伏响应。为了研究沉积在羧酸功能化 ITO/玻璃基底上的多晶 FAPbI3 薄膜的裂纹率(CR)相关结构和激子特性,我们测量并分析了各种光谱和图像,这些光谱和图像可用于了解由此产生的基于过氧化物的光伏电池的不同器件响应。我们的实验结果表明,表面缺陷的形成与捕获的碘介导缺陷之间存在权衡,因此未掺杂 -FAPbI3 活性层的最佳裂纹密度或 CR 在 4.86% 至 9.27% 之间。CR(拉伸应力)的降低会导致晶格压缩,从而将碘化物困在 FAPbI3 包晶薄膜底部区域的 PbI6 八面体附近。当 FAPbI3 薄膜的 CR 值为 8.47% 时,3 天后所得光伏电池的开路电压(短路电流密度)从 0.773 V(16.62 mA/cm2)显著增加到 0.945 V(18.20 mA/cm2)。我们的研究结果有助于理解基于 FAPbI3 包晶石的光伏电池在不同天数下的光伏响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural and excitonic properties of the polycrystalline FAPbI3thin films, and their photovoltaic responses.

Faormamadinium based perovskites have been proposed to replace the methylammonium lead tri-iodide (MAPbI3) perovskite as the light absorbing layer of photovoltaic cells owing to their photo-active and chemically stable properties. However, the crystal phase transition from the photo-activeα-FAPbI3to the non-perovksiteδ-FAPbI3still occurs in un-doped FAPbI3films owing to the existence of crack defects, which degrads the photovoltaic responses. To investigate the crack ratio (CR)-dependent structure and excitonic characteristics of the polycrystalline FAPbI3thin films deposited on the carboxylic acid functionalized ITO/glass substrates, various spectra and images were measured and analyzed, which can be utilized to make sense of the different devices responses of the resultant perovskite based photovoltaic cells. Our experimental results show that the there is a trade-off between the formations of surface defects and trapped iodide-mediated defects, thereby resulting in an optimal crack density or CR of the un-dopedα-FAPbI3active layer in the range from 4.86% to 9.27%. The decrease in the CR (tensile stress) results in the compressive lattice and thereby trapping the iodides near the PbI6octahedra in the bottom region of the FAPbI3perovskite films. When the CR of the FAPbI3film is 8.47%, the open-circuit voltage (short-circuit current density) of the resultant photovoltaic cells significantly increased from 0.773 V (16.62 mA cm-2) to 0.945 V (18.20 mA cm-2) after 3 d. Our findings help understanding the photovoltaic responses of the FAPbI3perovskite based photovoltaic cells on the different days.

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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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