{"title":"多晶 FAPbI3 薄膜的结构和激子特性及其光电响应。","authors":"Yi-Chun Huang, I-Jane Yen, Chih-Hsien Tseng, Hui-Yu Wang, Anjali Chandel, Sheng Hsiung Chang","doi":"10.1088/1361-6528/ad7f5b","DOIUrl":null,"url":null,"abstract":"<p><p>Faormamadinium based perovskites have been proposed to replace the methylammonium lead tri-iodide (MAPbI<sub>3</sub>) perovskite as the light absorbing layer of photovoltaic cells owing to their photo-active and chemically stable properties. However, the crystal phase transition from the photo-active<i>α</i>-FAPbI<sub>3</sub>to the non-perovksite<i>δ</i>-FAPbI<sub>3</sub>still occurs in un-doped FAPbI<sub>3</sub>films owing to the existence of crack defects, which degrads the photovoltaic responses. To investigate the crack ratio (CR)-dependent structure and excitonic characteristics of the polycrystalline FAPbI<sub>3</sub>thin films deposited on the carboxylic acid functionalized ITO/glass substrates, various spectra and images were measured and analyzed, which can be utilized to make sense of the different devices responses of the resultant perovskite based photovoltaic cells. Our experimental results show that the there is a trade-off between the formations of surface defects and trapped iodide-mediated defects, thereby resulting in an optimal crack density or CR of the un-doped<i>α</i>-FAPbI<sub>3</sub>active layer in the range from 4.86% to 9.27%. The decrease in the CR (tensile stress) results in the compressive lattice and thereby trapping the iodides near the PbI<sub>6</sub>octahedra in the bottom region of the FAPbI<sub>3</sub>perovskite films. When the CR of the FAPbI<sub>3</sub>film is 8.47%, the open-circuit voltage (short-circuit current density) of the resultant photovoltaic cells significantly increased from 0.773 V (16.62 mA cm<sup>-2</sup>) to 0.945 V (18.20 mA cm<sup>-2</sup>) after 3 d. Our findings help understanding the photovoltaic responses of the FAPbI<sub>3</sub>perovskite based photovoltaic cells on the different days.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and excitonic properties of the polycrystalline FAPbI<sub>3</sub>thin films, and their photovoltaic responses.\",\"authors\":\"Yi-Chun Huang, I-Jane Yen, Chih-Hsien Tseng, Hui-Yu Wang, Anjali Chandel, Sheng Hsiung Chang\",\"doi\":\"10.1088/1361-6528/ad7f5b\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Faormamadinium based perovskites have been proposed to replace the methylammonium lead tri-iodide (MAPbI<sub>3</sub>) perovskite as the light absorbing layer of photovoltaic cells owing to their photo-active and chemically stable properties. However, the crystal phase transition from the photo-active<i>α</i>-FAPbI<sub>3</sub>to the non-perovksite<i>δ</i>-FAPbI<sub>3</sub>still occurs in un-doped FAPbI<sub>3</sub>films owing to the existence of crack defects, which degrads the photovoltaic responses. To investigate the crack ratio (CR)-dependent structure and excitonic characteristics of the polycrystalline FAPbI<sub>3</sub>thin films deposited on the carboxylic acid functionalized ITO/glass substrates, various spectra and images were measured and analyzed, which can be utilized to make sense of the different devices responses of the resultant perovskite based photovoltaic cells. Our experimental results show that the there is a trade-off between the formations of surface defects and trapped iodide-mediated defects, thereby resulting in an optimal crack density or CR of the un-doped<i>α</i>-FAPbI<sub>3</sub>active layer in the range from 4.86% to 9.27%. The decrease in the CR (tensile stress) results in the compressive lattice and thereby trapping the iodides near the PbI<sub>6</sub>octahedra in the bottom region of the FAPbI<sub>3</sub>perovskite films. When the CR of the FAPbI<sub>3</sub>film is 8.47%, the open-circuit voltage (short-circuit current density) of the resultant photovoltaic cells significantly increased from 0.773 V (16.62 mA cm<sup>-2</sup>) to 0.945 V (18.20 mA cm<sup>-2</sup>) after 3 d. Our findings help understanding the photovoltaic responses of the FAPbI<sub>3</sub>perovskite based photovoltaic cells on the different days.</p>\",\"PeriodicalId\":19035,\"journal\":{\"name\":\"Nanotechnology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6528/ad7f5b\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ad7f5b","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Structural and excitonic properties of the polycrystalline FAPbI3thin films, and their photovoltaic responses.
Faormamadinium based perovskites have been proposed to replace the methylammonium lead tri-iodide (MAPbI3) perovskite as the light absorbing layer of photovoltaic cells owing to their photo-active and chemically stable properties. However, the crystal phase transition from the photo-activeα-FAPbI3to the non-perovksiteδ-FAPbI3still occurs in un-doped FAPbI3films owing to the existence of crack defects, which degrads the photovoltaic responses. To investigate the crack ratio (CR)-dependent structure and excitonic characteristics of the polycrystalline FAPbI3thin films deposited on the carboxylic acid functionalized ITO/glass substrates, various spectra and images were measured and analyzed, which can be utilized to make sense of the different devices responses of the resultant perovskite based photovoltaic cells. Our experimental results show that the there is a trade-off between the formations of surface defects and trapped iodide-mediated defects, thereby resulting in an optimal crack density or CR of the un-dopedα-FAPbI3active layer in the range from 4.86% to 9.27%. The decrease in the CR (tensile stress) results in the compressive lattice and thereby trapping the iodides near the PbI6octahedra in the bottom region of the FAPbI3perovskite films. When the CR of the FAPbI3film is 8.47%, the open-circuit voltage (short-circuit current density) of the resultant photovoltaic cells significantly increased from 0.773 V (16.62 mA cm-2) to 0.945 V (18.20 mA cm-2) after 3 d. Our findings help understanding the photovoltaic responses of the FAPbI3perovskite based photovoltaic cells on the different days.
期刊介绍:
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.