识别和合成记忆性 III-V 半导体的方法

IF 8.9 2区 环境科学与生态学 Q1 ENGINEERING, ENVIRONMENTAL
{"title":"识别和合成记忆性 III-V 半导体的方法","authors":"","doi":"10.1038/s41563-024-01991-0","DOIUrl":null,"url":null,"abstract":"A class of III–V semiconductors with memristive properties has been created by combining computational screening and experimental synthesis. The synthesized compounds have gate-tunable synaptic functions, and could be used to create energy-efficient, reprogrammable logic devices that are compatible with existing silicon technology.","PeriodicalId":37,"journal":{"name":"Environmental Science & Technology Letters Environ.","volume":null,"pages":null},"PeriodicalIF":8.9000,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An approach to identify and synthesize memristive III–V semiconductors\",\"authors\":\"\",\"doi\":\"10.1038/s41563-024-01991-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A class of III–V semiconductors with memristive properties has been created by combining computational screening and experimental synthesis. The synthesized compounds have gate-tunable synaptic functions, and could be used to create energy-efficient, reprogrammable logic devices that are compatible with existing silicon technology.\",\"PeriodicalId\":37,\"journal\":{\"name\":\"Environmental Science & Technology Letters Environ.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":8.9000,\"publicationDate\":\"2024-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Environmental Science & Technology Letters Environ.\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.nature.com/articles/s41563-024-01991-0\",\"RegionNum\":2,\"RegionCategory\":\"环境科学与生态学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ENVIRONMENTAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Environmental Science & Technology Letters Environ.","FirstCategoryId":"88","ListUrlMain":"https://www.nature.com/articles/s41563-024-01991-0","RegionNum":2,"RegionCategory":"环境科学与生态学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ENVIRONMENTAL","Score":null,"Total":0}
引用次数: 0

摘要

通过计算筛选和实验合成相结合的方法,创造出了一类具有记忆特性的 III-V 半导体。合成的化合物具有门调节突触功能,可用于制造与现有硅技术兼容的高能效、可重新编程的逻辑器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

An approach to identify and synthesize memristive III–V semiconductors

An approach to identify and synthesize memristive III–V semiconductors

An approach to identify and synthesize memristive III–V semiconductors
A class of III–V semiconductors with memristive properties has been created by combining computational screening and experimental synthesis. The synthesized compounds have gate-tunable synaptic functions, and could be used to create energy-efficient, reprogrammable logic devices that are compatible with existing silicon technology.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Environmental Science & Technology Letters Environ.
Environmental Science & Technology Letters Environ. ENGINEERING, ENVIRONMENTALENVIRONMENTAL SC-ENVIRONMENTAL SCIENCES
CiteScore
17.90
自引率
3.70%
发文量
163
期刊介绍: Environmental Science & Technology Letters serves as an international forum for brief communications on experimental or theoretical results of exceptional timeliness in all aspects of environmental science, both pure and applied. Published as soon as accepted, these communications are summarized in monthly issues. Additionally, the journal features short reviews on emerging topics in environmental science and technology.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信