{"title":"本征铁磁半金属 VI3 单层中具有电子相关性的多重拓扑相位","authors":"Xiaosong Zhao, Yukai An","doi":"10.1002/smll.202407232","DOIUrl":null,"url":null,"abstract":"<p>2D topological materials with magnetic ordering have become hot topics due to their nontrivial band topology and quantum states. In this work, the second-order topological states and evolution of linear band crossing are successfully predicted utilizing the effective <i>k· p</i> and tight binding models in the intrinsic ferromagnetic VI<sub>3</sub> monolayer under various effective Hubble interaction U<sub>eff</sub>. Upon inclusion of spin orbit coupling, a small bandgap (E<sub>g</sub>-1) of 12.7 meV is opened with a Chern invariant C = −1 at U<sub>eff</sub> = 0 eV. The E<sub>g</sub>-1 undergoes a transition from the non-trivial state to trivial state at U<sub>eff</sub> = 0.80 eV, accompanied by the appearance of Dirac cone. Remarkably, the increase of U<sub>eff</sub> causes the band inversion and adjustment of crystal symmetry, resulting in two unreported coexisting topological bandgaps (E<sub>g</sub>-2 and E<sub>g</sub>-3). Furthermore, a gapless node-loop appears at U<sub>eff</sub> = 1.06 eV and disappears at U<sub>eff</sub> = 1.09 eV around Γ point. Moreover, for the first time, the existence of second-order topological states with quantized corner fractional charges (e/3) is also observed in the VI<sub>3</sub> monolayer at U<sub>eff</sub> ≥0.96 eV. These results make the VI<sub>3</sub> monolayer a compelling candidate for exploring topological devices.</p>","PeriodicalId":228,"journal":{"name":"Small","volume":"20 50","pages":""},"PeriodicalIF":13.0000,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multiple Topological Phases with Electronic Correlation in Intrinsic Ferromagnetic Semimetal VI3 Monolayer\",\"authors\":\"Xiaosong Zhao, Yukai An\",\"doi\":\"10.1002/smll.202407232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>2D topological materials with magnetic ordering have become hot topics due to their nontrivial band topology and quantum states. In this work, the second-order topological states and evolution of linear band crossing are successfully predicted utilizing the effective <i>k· p</i> and tight binding models in the intrinsic ferromagnetic VI<sub>3</sub> monolayer under various effective Hubble interaction U<sub>eff</sub>. Upon inclusion of spin orbit coupling, a small bandgap (E<sub>g</sub>-1) of 12.7 meV is opened with a Chern invariant C = −1 at U<sub>eff</sub> = 0 eV. The E<sub>g</sub>-1 undergoes a transition from the non-trivial state to trivial state at U<sub>eff</sub> = 0.80 eV, accompanied by the appearance of Dirac cone. Remarkably, the increase of U<sub>eff</sub> causes the band inversion and adjustment of crystal symmetry, resulting in two unreported coexisting topological bandgaps (E<sub>g</sub>-2 and E<sub>g</sub>-3). Furthermore, a gapless node-loop appears at U<sub>eff</sub> = 1.06 eV and disappears at U<sub>eff</sub> = 1.09 eV around Γ point. Moreover, for the first time, the existence of second-order topological states with quantized corner fractional charges (e/3) is also observed in the VI<sub>3</sub> monolayer at U<sub>eff</sub> ≥0.96 eV. These results make the VI<sub>3</sub> monolayer a compelling candidate for exploring topological devices.</p>\",\"PeriodicalId\":228,\"journal\":{\"name\":\"Small\",\"volume\":\"20 50\",\"pages\":\"\"},\"PeriodicalIF\":13.0000,\"publicationDate\":\"2024-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Small\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/smll.202407232\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/smll.202407232","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
具有磁有序性的二维拓扑材料因其非难带拓扑和量子态而成为热门话题。在这项研究中,利用有效 k- p 和紧密结合模型,成功地预测了本征铁磁 VI3 单层材料在不同有效哈勃相互作用 Ueff 下的二阶拓扑态和线性带交叉的演化。加入自旋轨道耦合后,在 Ueff = 0 eV 时,打开了一个 12.7 meV 的小带隙 (Eg-1),其切尔诺不变式为 C =-1。在 Ueff = 0.80 eV 时,Eg-1 经历了从非琐碎态到琐碎态的转变,同时出现了狄拉克锥。值得注意的是,Ueff 的增加会导致带反转和晶体对称性的调整,从而产生两个未报道过的共存拓扑带隙(Eg-2 和 Eg-3)。此外,在 Ueff = 1.06 eV 时出现了一个无间隙节点环,而在Γ点附近的 Ueff = 1.09 eV 时消失。此外,在 Ueff ≥0.96 eV 时,还首次在 VI3 单层中观察到了具有量子化角分数电荷 (e/3) 的二阶拓扑态。这些结果使 VI3 单层成为探索拓扑器件的理想候选材料。
Multiple Topological Phases with Electronic Correlation in Intrinsic Ferromagnetic Semimetal VI3 Monolayer
2D topological materials with magnetic ordering have become hot topics due to their nontrivial band topology and quantum states. In this work, the second-order topological states and evolution of linear band crossing are successfully predicted utilizing the effective k· p and tight binding models in the intrinsic ferromagnetic VI3 monolayer under various effective Hubble interaction Ueff. Upon inclusion of spin orbit coupling, a small bandgap (Eg-1) of 12.7 meV is opened with a Chern invariant C = −1 at Ueff = 0 eV. The Eg-1 undergoes a transition from the non-trivial state to trivial state at Ueff = 0.80 eV, accompanied by the appearance of Dirac cone. Remarkably, the increase of Ueff causes the band inversion and adjustment of crystal symmetry, resulting in two unreported coexisting topological bandgaps (Eg-2 and Eg-3). Furthermore, a gapless node-loop appears at Ueff = 1.06 eV and disappears at Ueff = 1.09 eV around Γ point. Moreover, for the first time, the existence of second-order topological states with quantized corner fractional charges (e/3) is also observed in the VI3 monolayer at Ueff ≥0.96 eV. These results make the VI3 monolayer a compelling candidate for exploring topological devices.
期刊介绍:
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