对偶反铁磁体中垂直奈尔阶的电开关

IF 33.7 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Wenqing He, Tianyi Zhang, Yongjian Zhou, Caihua Wan, Hao Wu, Baoshan Cui, Jihao Xia, Ran Zhang, Tengyu Guo, Peng Chen, Mingkun Zhao, Leina Jiang, Alexander Grutter, Purnima P. Balakrishnan, Andrew J. Caruana, Christy J. Kinane, Sean Langridge, Guoqiang Yu, Cheng Song, Xiufeng Han
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引用次数: 0

摘要

自旋电子学的基础是通过电流诱导的自旋力矩对磁序进行电子操纵。在具有垂直磁各向异性的对偶反铁磁体中,二元态可以直接被编码为其相反的奈尔阶。这些系统的杂散磁场和太赫兹自旋动力学可忽略不计,这意味着它们有可能被用于开发高集成度的超快存储器件。在这里,我们报告了在共轭反铁磁体中垂直奈尔阶的电开关。我们表明,在一个原型对偶反铁磁绝缘体--氧化铬(Cr2O3)--中的奈尔阶可以通过自旋轨道力矩以较低的电流密度(5.8 × 106 A cm-2)进行切换,并通过反常霍尔效应读出。我们还表明,与 Cr2O3 层交换耦合的 Y3Fe5O12 薄膜的磁化可以进行电切换,从而证实了 Cr2O3 层的奈尔阶切换。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Electrical switching of the perpendicular Néel order in a collinear antiferromagnet

Electrical switching of the perpendicular Néel order in a collinear antiferromagnet

Electrical switching of the perpendicular Néel order in a collinear antiferromagnet
Spintronics is based on the electrical manipulation of magnetic order through current-induced spin torques. In collinear antiferromagnets with perpendicular magnetic anisotropy, binary states can be directly encoded in their opposite Néel order. The negligible stray fields and terahertz spin dynamics of these systems mean that they could potentially be used to develop ultrafast memory devices with high integration density. Here we report electrical switching of the perpendicular Néel order in a collinear antiferromagnet. We show that the Néel order in a prototypical collinear antiferromagnetic insulator—chromium oxide (Cr2O3)—can be switched by the spin–orbit torque with a low current density (5.8 × 106 A cm−2) and read out by the anomalous Hall effect. We also show that the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer can be electrically switched, confirming the Néel order switching of the Cr2O3 layer. The perpendicular Néel order in a collinear antiferromagnetic insulator—chromium oxide—can be switched by 180° via the spin–orbit torque with a low current density of 5.8 × 106 A cm−2 and read out via the anomalous Hall effect.
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来源期刊
Nature Electronics
Nature Electronics Engineering-Electrical and Electronic Engineering
CiteScore
47.50
自引率
2.30%
发文量
159
期刊介绍: Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.
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