Multilayer Graphene Strips on Insulators Formed by Layer Exchange for Applications as Interconnects

Multilayer graphene (MLG) has attracted considerable attention as an interconnect material owing to its excellent electrical and mechanical properties. Several studies on the formation of MLG on insulators have been reported; however, the process temperature and shape controllability of MLG remain challenging. In this study, we investigated the formation of MLG strips for interconnect via metal-induced layer exchange (LE). The LE of strip-patterned amorphous carbon and Ni formed {002}-oriented high-crystallinity MLG strips at low temperatures (600 °C). While voids were formed inside the strip, continuous MLG was formed at the strip edge, likely due to the remarkable atomic diffusion at the edge. Smaller widths and larger thicknesses of the MLG strip allowed us to form uniform MLG strips without voids, and an electrical conductivity of 1100 S cm^–1 was achieved. The technique developed in this study is unique because it overcomes the limitations of conventional MLG fabrication techniques and is promising for MLG interconnect applications.