Karin Yamamura, Nathan Coste, Helen Zhi Jie Zeng, Milos Toth, Mehran Kianinia, Igor Aharonovich
{"title":"六方氮化硼中 B 中心的量子效率","authors":"Karin Yamamura, Nathan Coste, Helen Zhi Jie Zeng, Milos Toth, Mehran Kianinia, Igor Aharonovich","doi":"10.1515/nanoph-2024-0412","DOIUrl":null,"url":null,"abstract":"B-centers in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths at 436 nm. Here, we leverage the layered nature of hBN to directly measure the quantum efficiency (QE) of single B-centers. The defects were engineered in a 35 nm flake of hBN using electron beam irradiation, and the local dielectric environment was altered by transferring a 250 nm hBN flake on top of the one containing the emitters. By analyzing the resulting change in measured lifetimes, we determined the QE of B-centers in the thin flake of hBN. Additionally, we propose two approaches to quantify the QE of B-centers in thick flakes of hBN. Our results indicate that B-centers located in thin flakes can exhibit QEs higher than 40 %. Near-unity QEs are achievable under reasonable Purcell enhancement for emitters embedded in thick flakes of hBN, highlighting their promise for quantum photonics applications.","PeriodicalId":19027,"journal":{"name":"Nanophotonics","volume":"33 1","pages":""},"PeriodicalIF":6.5000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum efficiency of the B-center in hexagonal boron nitride\",\"authors\":\"Karin Yamamura, Nathan Coste, Helen Zhi Jie Zeng, Milos Toth, Mehran Kianinia, Igor Aharonovich\",\"doi\":\"10.1515/nanoph-2024-0412\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"B-centers in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths at 436 nm. Here, we leverage the layered nature of hBN to directly measure the quantum efficiency (QE) of single B-centers. The defects were engineered in a 35 nm flake of hBN using electron beam irradiation, and the local dielectric environment was altered by transferring a 250 nm hBN flake on top of the one containing the emitters. By analyzing the resulting change in measured lifetimes, we determined the QE of B-centers in the thin flake of hBN. Additionally, we propose two approaches to quantify the QE of B-centers in thick flakes of hBN. Our results indicate that B-centers located in thin flakes can exhibit QEs higher than 40 %. Near-unity QEs are achievable under reasonable Purcell enhancement for emitters embedded in thick flakes of hBN, highlighting their promise for quantum photonics applications.\",\"PeriodicalId\":19027,\"journal\":{\"name\":\"Nanophotonics\",\"volume\":\"33 1\",\"pages\":\"\"},\"PeriodicalIF\":6.5000,\"publicationDate\":\"2024-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanophotonics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1515/nanoph-2024-0412\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanophotonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1515/nanoph-2024-0412","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Quantum efficiency of the B-center in hexagonal boron nitride
B-centers in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths at 436 nm. Here, we leverage the layered nature of hBN to directly measure the quantum efficiency (QE) of single B-centers. The defects were engineered in a 35 nm flake of hBN using electron beam irradiation, and the local dielectric environment was altered by transferring a 250 nm hBN flake on top of the one containing the emitters. By analyzing the resulting change in measured lifetimes, we determined the QE of B-centers in the thin flake of hBN. Additionally, we propose two approaches to quantify the QE of B-centers in thick flakes of hBN. Our results indicate that B-centers located in thin flakes can exhibit QEs higher than 40 %. Near-unity QEs are achievable under reasonable Purcell enhancement for emitters embedded in thick flakes of hBN, highlighting their promise for quantum photonics applications.
期刊介绍:
Nanophotonics, published in collaboration with Sciencewise, is a prestigious journal that showcases recent international research results, notable advancements in the field, and innovative applications. It is regarded as one of the leading publications in the realm of nanophotonics and encompasses a range of article types including research articles, selectively invited reviews, letters, and perspectives.
The journal specifically delves into the study of photon interaction with nano-structures, such as carbon nano-tubes, nano metal particles, nano crystals, semiconductor nano dots, photonic crystals, tissue, and DNA. It offers comprehensive coverage of the most up-to-date discoveries, making it an essential resource for physicists, engineers, and material scientists.