{"title":"室温下的高选择性近红外非晶硅质子光电探测器","authors":"","doi":"10.1016/j.sna.2024.115925","DOIUrl":null,"url":null,"abstract":"<div><div>This study employed amorphous materials to construct a Near-Infrared (NIR) photodetector, enabling optical sensing over a non-crystalline platform. Utilizing an Au/a-Si Schottky junction with an interfacial oxide layer, the device showcased its capability as a NIR photodetector, effectively operating within a wavelength range of up to 1700 nm. Remarkably, it exhibited significant surface plasmon resonance peaks with high selectivity, a full-width at half-maximum of less than 3°, and a sensitivity of −33.3 dBm, demonstrated at room temperature and zero-biasing conditions. Barrier lowering under biasing further increases the device's responsivity by an order of magnitude, revealing absorption capabilities that exceed the material's intrinsic bandgap limitations. This advancement opens the door to developing highly selective detectors using cost-effective amorphous materials and straightforward design. Additionally, a-Si-based photodetectors contribute to environmental preservation as they do not contain toxic heavy metals, establishing them as one of the most Eco-friendly detection solutions.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-selectivity NIR amorphous silicon-based plasmonic photodetector at room temperature\",\"authors\":\"\",\"doi\":\"10.1016/j.sna.2024.115925\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study employed amorphous materials to construct a Near-Infrared (NIR) photodetector, enabling optical sensing over a non-crystalline platform. Utilizing an Au/a-Si Schottky junction with an interfacial oxide layer, the device showcased its capability as a NIR photodetector, effectively operating within a wavelength range of up to 1700 nm. Remarkably, it exhibited significant surface plasmon resonance peaks with high selectivity, a full-width at half-maximum of less than 3°, and a sensitivity of −33.3 dBm, demonstrated at room temperature and zero-biasing conditions. Barrier lowering under biasing further increases the device's responsivity by an order of magnitude, revealing absorption capabilities that exceed the material's intrinsic bandgap limitations. This advancement opens the door to developing highly selective detectors using cost-effective amorphous materials and straightforward design. Additionally, a-Si-based photodetectors contribute to environmental preservation as they do not contain toxic heavy metals, establishing them as one of the most Eco-friendly detection solutions.</div></div>\",\"PeriodicalId\":21689,\"journal\":{\"name\":\"Sensors and Actuators A-physical\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators A-physical\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0924424724009191\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424724009191","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-selectivity NIR amorphous silicon-based plasmonic photodetector at room temperature
This study employed amorphous materials to construct a Near-Infrared (NIR) photodetector, enabling optical sensing over a non-crystalline platform. Utilizing an Au/a-Si Schottky junction with an interfacial oxide layer, the device showcased its capability as a NIR photodetector, effectively operating within a wavelength range of up to 1700 nm. Remarkably, it exhibited significant surface plasmon resonance peaks with high selectivity, a full-width at half-maximum of less than 3°, and a sensitivity of −33.3 dBm, demonstrated at room temperature and zero-biasing conditions. Barrier lowering under biasing further increases the device's responsivity by an order of magnitude, revealing absorption capabilities that exceed the material's intrinsic bandgap limitations. This advancement opens the door to developing highly selective detectors using cost-effective amorphous materials and straightforward design. Additionally, a-Si-based photodetectors contribute to environmental preservation as they do not contain toxic heavy metals, establishing them as one of the most Eco-friendly detection solutions.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...