基于 VO2 相变原理的温度可调太赫兹超材料器件

IF 3.5 3区 化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR
Hao Sun, Tangyou Sun, Qianju Song, Liang Bian, Zao Yi, Jianguo Zhang, Zhiqiang hao, Chaojun Tang, Pinghui Wu, Qingdong Zeng
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引用次数: 0

摘要

太赫兹器件在太赫兹技术的发展中发挥着不可替代的作用。遗憾的是,许多天然材料在太赫兹波段难以响应,因此用它们制成的器件功能单一。为了实现器件功能的多样性和可调谐性,我们设计了一种由热致相变材料 VO2 组成的太赫兹超材料器件。该器件结构由金底层、二氧化硅介电层和 VO2 表层组成。我们采用三维电磁仿真,利用布鲁格曼有效介质理论阐明了二氧化钒的相变特性,而德鲁德模型则建立了二氧化钒电导率与温度之间的函数关系。利用阻抗匹配理论阐述了高吸收率的基本原理。通过软件模拟,我们知道当温度为 313 K 时,器件在整个太赫兹波段都具有完全的反射能力。当 T=342 K 时,在 4.71~9.41 太赫兹的超宽带范围内,平均吸收率在 95% 以上,在 6.31 太赫兹时,吸收率达到惊人的 0.99999,因此该器件的最大热调制范围为 0.001-0.99999,超过了目前绝大多数的吸收器。通过说明加热过程中相变温度前后器件表面的电场强度分布,我们证实了二氧化钒的相变,并阐明了器件性能的转变。此外,我们还描绘了具有不同结构的器件的吸收率图,以进一步说明每种结构对器件吸收特性的影响。我们探讨了器件几何尺寸对吸收率的影响,为实际应用提供了一定的参考值。总之,我们设计出了一种结构简单、吸收率高、吸收带宽宽的可调谐太赫兹器件,可用于能量收集、电磁隐身、调制等领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature tunable terahertz metamaterial device based on VO2 phase transition principle
Terahertz devices play an irreplaceable role in the development of terahertz technology. The bad thing is that many natural materials are difficult to respond in terahertz band, so the devices made of them have single function. In order to realize the diversity and tunability of device functions, we designed a terahertz metamaterial device composed of thermally induced phase change material VO2. The device structure is composed of Au bottom layer, SiO2 dielectric layer and VO2 top layer. We use the three-dimensional electromagnetic simulation, and use Bruggeman effective medium theory to clarify the phase transition characteristics of vanadium dioxide, while the Drude model establishes the functional relationship between the conductivity of vanadium dioxide and temperature. The basic principle behind high absorptivity is expounded by using impedance matching theory. Through software simulation, we know that when T=313 K, the device has complete reflection ability in the whole terahertz band. When T=342 K, the average absorption rate is above 95% in the ultra wideband range of 4.71~9.41 THz, and the absorption rate reaches an amazing 0.99999 at 6.31 THz, so the maximum thermal modulation range of the device is 0.001-0.99999, which exceeds the vast majority of current absorbers. By illustrating the electric field intensity distribution on the device surface pre and post the phase transition temperature during the heating process, we substantiate the vanadium dioxide phase transition and elucidate the transformation of device performance. Furthermore, absorptivity diagrams for the device with distinct structures are depicted to further exemplify the impact of each structure on the device's absorption characteristics. We explored the influence of the geometric size of the device on the absorptivity, which provides a certain reference value for practical application. In a word, we have designed a tunable terahertz device with simple structure, high absorption rate, wide absorption bandwidth, which can be used in the fields of energy collection, electromagnetic stealth, modulation and so on.
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来源期刊
Dalton Transactions
Dalton Transactions 化学-无机化学与核化学
CiteScore
6.60
自引率
7.50%
发文量
1832
审稿时长
1.5 months
期刊介绍: Dalton Transactions is a journal for all areas of inorganic chemistry, which encompasses the organometallic, bioinorganic and materials chemistry of the elements, with applications including synthesis, catalysis, energy conversion/storage, electrical devices and medicine. Dalton Transactions welcomes high-quality, original submissions in all of these areas and more, where the advancement of knowledge in inorganic chemistry is significant.
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