{"title":"在 K/Ka 和 E/W 波段使用晶格网络的超宽带 4 位分布式移相器","authors":"Sungwon Kwon;Minjae Jung;Byung-Wook Min","doi":"10.1109/OJSSCS.2024.3453777","DOIUrl":null,"url":null,"abstract":"In this article, we introduce an ultra-wideband 4-bit distributed phase shifter using a lattice network. To achieve wider bandwidth, the proposed phase shifter employed an all-pass lattice network instead of the traditional low-pass ladder network. Seven cascaded 22.5° lattice phase shifters and one switched line 180° phase shifter were used to achieve 360° phase shift range. Based on our theoretical analysis, we designed the lattice network as a constant-phase shifter rather than a delay line. Implementations in the K/Ka- and E/W-bands validate the suitability of the lattice network for constant-phase shifting. Fabricated using 28-nm bulk CMOS technology, the K/Ka-band phase shifter had a size of 0.45 mm2 excluding pads. Within the frequency range of 20.5–35.5 GHz, the root-mean-square (RMS) phase error ranged from 1.6 to 5°, the RMS gain error ranged from 0.3 to 0.6 dB, and the return loss remained above 10 dB. At 28 GHz, the insertion loss was \n<inline-formula> <tex-math>$11.6\\pm 0$ </tex-math></inline-formula>\n.8 dB without dc power consumption. Fabricated using 28-nm FD-SOI technology, the E/W-band phase shifter had a size of 0.3 mm2 excluding pads. Within the frequency range of 63.5–100.5 GHz, the RMS phase error ranged from 2.4 to 4.6°, the RMS gain error ranged from 0.44 to 1 dB, and the return loss remained above 10 dB. At 82 GHz, the insertion loss was \n<inline-formula> <tex-math>$11.9\\pm 1$ </tex-math></inline-formula>\n.1 dB without dc power consumption. The proposed phase shifter demonstrated exceptional performance for multistandard operation, achieving low RMS phase and gain errors across a wide fractional bandwidth of 53.6% and 45.1%, respectively.","PeriodicalId":100633,"journal":{"name":"IEEE Open Journal of the Solid-State Circuits Society","volume":"4 ","pages":"122-130"},"PeriodicalIF":0.0000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10663470","citationCount":"0","resultStr":"{\"title\":\"Ultra-Wideband 4-Bit Distributed Phase Shifters Using Lattice Network at K/Ka- and E/W-Band\",\"authors\":\"Sungwon Kwon;Minjae Jung;Byung-Wook Min\",\"doi\":\"10.1109/OJSSCS.2024.3453777\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, we introduce an ultra-wideband 4-bit distributed phase shifter using a lattice network. To achieve wider bandwidth, the proposed phase shifter employed an all-pass lattice network instead of the traditional low-pass ladder network. Seven cascaded 22.5° lattice phase shifters and one switched line 180° phase shifter were used to achieve 360° phase shift range. Based on our theoretical analysis, we designed the lattice network as a constant-phase shifter rather than a delay line. Implementations in the K/Ka- and E/W-bands validate the suitability of the lattice network for constant-phase shifting. Fabricated using 28-nm bulk CMOS technology, the K/Ka-band phase shifter had a size of 0.45 mm2 excluding pads. Within the frequency range of 20.5–35.5 GHz, the root-mean-square (RMS) phase error ranged from 1.6 to 5°, the RMS gain error ranged from 0.3 to 0.6 dB, and the return loss remained above 10 dB. At 28 GHz, the insertion loss was \\n<inline-formula> <tex-math>$11.6\\\\pm 0$ </tex-math></inline-formula>\\n.8 dB without dc power consumption. Fabricated using 28-nm FD-SOI technology, the E/W-band phase shifter had a size of 0.3 mm2 excluding pads. Within the frequency range of 63.5–100.5 GHz, the RMS phase error ranged from 2.4 to 4.6°, the RMS gain error ranged from 0.44 to 1 dB, and the return loss remained above 10 dB. At 82 GHz, the insertion loss was \\n<inline-formula> <tex-math>$11.9\\\\pm 1$ </tex-math></inline-formula>\\n.1 dB without dc power consumption. The proposed phase shifter demonstrated exceptional performance for multistandard operation, achieving low RMS phase and gain errors across a wide fractional bandwidth of 53.6% and 45.1%, respectively.\",\"PeriodicalId\":100633,\"journal\":{\"name\":\"IEEE Open Journal of the Solid-State Circuits Society\",\"volume\":\"4 \",\"pages\":\"122-130\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10663470\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Open Journal of the Solid-State Circuits Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10663470/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of the Solid-State Circuits Society","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10663470/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-Wideband 4-Bit Distributed Phase Shifters Using Lattice Network at K/Ka- and E/W-Band
In this article, we introduce an ultra-wideband 4-bit distributed phase shifter using a lattice network. To achieve wider bandwidth, the proposed phase shifter employed an all-pass lattice network instead of the traditional low-pass ladder network. Seven cascaded 22.5° lattice phase shifters and one switched line 180° phase shifter were used to achieve 360° phase shift range. Based on our theoretical analysis, we designed the lattice network as a constant-phase shifter rather than a delay line. Implementations in the K/Ka- and E/W-bands validate the suitability of the lattice network for constant-phase shifting. Fabricated using 28-nm bulk CMOS technology, the K/Ka-band phase shifter had a size of 0.45 mm2 excluding pads. Within the frequency range of 20.5–35.5 GHz, the root-mean-square (RMS) phase error ranged from 1.6 to 5°, the RMS gain error ranged from 0.3 to 0.6 dB, and the return loss remained above 10 dB. At 28 GHz, the insertion loss was
$11.6\pm 0$
.8 dB without dc power consumption. Fabricated using 28-nm FD-SOI technology, the E/W-band phase shifter had a size of 0.3 mm2 excluding pads. Within the frequency range of 63.5–100.5 GHz, the RMS phase error ranged from 2.4 to 4.6°, the RMS gain error ranged from 0.44 to 1 dB, and the return loss remained above 10 dB. At 82 GHz, the insertion loss was
$11.9\pm 1$
.1 dB without dc power consumption. The proposed phase shifter demonstrated exceptional performance for multistandard operation, achieving low RMS phase and gain errors across a wide fractional bandwidth of 53.6% and 45.1%, respectively.