Na2Mo2O7 晶体的布里奇曼生长和发光特性

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Aoqi Xu , Haohong Chen , Wei Xiong , Liang Chen , Yao Zhou , Ying Li , Hui Yuan
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引用次数: 0

摘要

本研究介绍了一种用于二钼酸二钠(Na2Mo2O7,NM2O)晶体生长的布里奇曼法,以及对其发光机理的理解。采用垂直布里奇曼法生长出了尺寸为 23 * 23 * 90 mm3 的 NM2O 晶体。X 射线衍射和扫描电子显微镜分析了 NM2O 晶体的裂解过程,结果表明该晶体沿(0 0 1)面裂解,裂解面呈阶梯状。利用透射光谱和激光激发发光光谱对其发光特性进行了研究,结果表明,厚度为 5 毫米的样品在 500-700 纳米范围内的透射率达到 85%,吸收截止边为 360 纳米,光带隙为 3.35 eV。在 278 nm 激光束的激发下,样品呈现出双峰发射,通常在 598 nm 和 673 nm 左右,这与[MoO6]6- 和 [MoO4]2- 基团上的自俘获激子分别发生放射性湮灭一致。此外,还测量并讨论了低温下的发光情况。所有结果都有利于晶体生长和应用于功能材料的 0νββ 实验。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bridgman growth and luminescence properties of Na2Mo2O7 crystal
This research presents a Bridgman method for the crystal growth of disodium dimolybdate (Na2Mo2O7, NM2O) crystals and understanding their luminescence mechanism. An NM2O crystal with a size of 23 * 23 * 90 mm3 was grown using the vertical Bridgman method. The cleavage of the NM2O crystal was analyzed by X-ray diffraction and scanning electron microscopy, which showed that the crystal cleaves along the (0 0 1) plane and the cleavage planes appear in a step pattern. Its luminescence properties were studied using transmission spectra and laser-stimulated luminescence spectra, which showed that the transmittance of a 5 mm thick sample reaches 85 % in the range of 500–700 nm with the absorption cutoff edge at 360 nm, resulting in the optical band gap of 3.35 eV. Under excitation of a 278 nm laser beam, the sample exhibited dual-peak emission, typically at around 598 nm and 673 nm, consistent with radioactive annihilation of the self-trapped exciton on [MoO6]6− and [MoO4]2− groups respectively. Also the luminescence at low temperatures were measured and discussed. All results can benefit the crystal growth and application to the 0νββ experiments for the functional material.
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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