具有 Kagome 晶格的 Li9Fe3(P2O7)3(PO4)2 的晶体生长和磁致效应

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-09-19 DOI:10.1016/j.jcrysgro.2024.127896

Yicai Zhang , Zuhua Chen , Shilin Yu , Guochun Zhang , Jiahao Gao , Changkun Wang , Qiaoyan Dong , Jun Shen , Heng Tu

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引用次数: 0

摘要

随着人们对低温技术的需求日益增长，基于磁性材料磁致效应（MCE）的磁制冷技术越来越受到关注。在这项工作中，采用高温通量法生长了 Li9Fe3(P2O7)3(PO4)2 (LFPP) 晶体。分析了晶体的结构特征，并首次详细研究了它的磁致效应（MCE）。在 0-7 T 的磁场变化下，LFPP 在 4 K 和 5 K 时的最大磁熵变化（-ΔSM）分别为 4.6 J/kg-K (H⊥c) 和 4.1 J/kg-K (H//c)。相变温度附近 -ΔSM 的缓慢下降意味着 LFPP 具有较大的制冷温度范围。

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Crystal growth and magnetocaloric effect of Li9Fe3(P2O7)3(PO4)2 with Kagome lattice

With the growing demand for low-temperature technologies, magnetic refrigeration, which is based on magnetocaloric effect (MCE) of magnetic materials, has attracted increasing attention. In this work, Li₉Fe₃(P₂O₇)₃(PO₄)₂ (LFPP) crystals have been grown by the high-temperature flux method. The crystal structural characterization is analyzed, and its magnetocaloric effect (MCE) is in detail investigated for the first time. The maximum magnetic entropy changes (−ΔS_M) of LFPP under a field change of 0–7 T are determined to be 4.6 J/kg·K (H⊥c) and 4.1 J/kg·K (H//c) at 4 K and 5 K, respectively. The slow decrease of −ΔS_M around the phase transition temperature implies that LFPP has a large refrigeration temperature range.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.