从根本上了解 Bi 和 MoS2 的界面化学和电接触特性。

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Seong Yeoul Kim, Zheng Sun, Joy Roy, Xinglu Wang, Zhihong Chen, Joerg Appenzeller, Robert M Wallace
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引用次数: 0

摘要

二硫化钼(MoS2)上铋(Bi)触点的界面特性和热稳定性揭示了它们在不同沉积条件和温度下的行为。研究采用了大量技术,包括 X 射线光电子能谱、扫描隧道显微镜(STM)和扫描隧道光谱(STS)。无论超高真空(UHV,3 × 10-11 mbar)和高真空(HV,4 × 10-6 mbar)等沉积条件如何,铋触点都在 MoS2 上形成了范德华界面,同时还观察到了 MoS2 上的氧化现象。然而,Bi 的半金属特性抑制了缺陷态的影响,包括氧化 MoS2 和空位。值得注意的是,尽管存在 STM 和 STS 检测到的缺陷,Bi/MoS2 的 n 型特性仍未受到影响,而且在导带最小值附近的局部态密度也未观察到显著变化。因此,费米级 (EF) 位于 MoS2 的导带之下。研究还考察了退火对接触界面的影响,结果表明在 300 °C 以下,Bi 和 MoS2 之间没有发生界面反应。这些发现加深了我们对 MoS2 上半金属(Bi)接触的理解,对提高电子设备的性能和可靠性具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS<sub>2</sub>.

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2.

The interface properties and thermal stability of bismuth (Bi) contacts on molybdenum disulfide (MoS2) shed light on their behavior under various deposition conditions and temperatures. The examination involves extensive techniques including X-ray photoelectron spectroscopy, scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). Bi contacts formed a van der Waals interface on MoS2 regardless of deposition conditions, such as ultrahigh vacuum (UHV, 3 × 10-11 mbar) and high vacuum (HV, 4 × 10-6 mbar), while the oxidation on MoS2 has been observed. However, the semimetallic properties of Bi suppress the impact of defect states, including oxidized-MoS2 and vacancies. Notably, the n-type characteristic of Bi/MoS2 remains unaffected, and no significant changes in the local density of states near the conduction band minimum are observed despite the presence of defects detected by STM and STS. As a result, the Fermi level (EF) resides below the conduction band of MoS2. The study also examines the impact of annealing on the contact interface, revealing no interface reaction between Bi and MoS2 up to 300 °C. These findings enhance our understanding of semimetal (Bi) contacts on MoS2, with implications for improving the performance and reliability of electronic devices.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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