利用磁屏蔽效应进行二维定位的创新方法

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2024-09-19 DOI:10.1016/j.sna.2024.115910

Kiera Montgomery, Kean Chin Aw

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引用次数: 0

摘要

当在电磁场中放置铜或铝等低成本透磁物体时，可以通过观察其对电磁场的影响来确定物体的位置。这种方法提供了一种实现可靠定位的新技术，特别是在视线传感方法可能不适用的环境中。对尺寸为 30×30 毫米、厚度为 80 微米的屏蔽进行了研究；这些尺寸的铜屏蔽将信号强度降低到 91%，铝屏蔽将信号强度降低到初始强度的 94%。电磁场的失真与标签的位置密切相关。通过对每个传感器的数据进行倒高斯曲线拟合，可以预测屏蔽层沿线的位置。通过在传感平面下方创建一个二维传感器阵列，这种方法可用于定位二维平面内的标签。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An innovative approach to 2D localization using the magnetic shielding effect

The effect on an electromagnetic field when a low-cost magnetically permeable object such as copper or aluminum is placed within it can be observed to determine the object’s location. This approach offers a novel technique to achieve reliable localization, particularly in environments where line of sight sensing methods may be non-applicable. Shields up to a size of 30×30 mm and a thickness of 80 µm were investigated; copper shields of these dimensions reduced the signal strength to 91 %, and aluminum shields reduced the signal strength to 94 % of its initial strength. The distortions to the electromagnetic field were closely related to the location of the tag. By fitting an inverted Gaussian curve to each sensor’s data, the position of a shield along a line could be predicted. This method can be used to locate a tag within a 2D plane by creating a 2D array of sensors beneath the sensing plane.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...