原子尺度 DFTB 算法对 S 掺杂石墨烯纳米带电子结构的影响

IF 3.7 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Xinran Wang, Lin Zhang
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引用次数: 0

摘要

利用自洽电荷密度泛函紧密结合模拟提供了掺杂 S 原子对不同宽度的扶手石墨烯纳米带的几何结构和电子状态的影响。研究表征了 HOMO 和 LUMO 能级上的几何构型、能量、电荷密度差、Mulliken 电荷以及分子轨道。除了键长和键角的变化,计算结果还表明,石墨烯纳米带的带结构和带隙受纳米带宽度和 S 掺杂位置的影响,在这些位置上,纳米带表现出金属或半导体特性。掺杂 S 原子会导致掺杂原子附近原子的电荷密度差和 Mulliken 电荷发生显著变化。同时,HOMOs 和 LUMOs 也出现了差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Implications for electronic structures of S-doped graphene nanoribbons from a DFTB algorithm at atomic scale
Self-consistent charge density functional tight binding simulations were used to provide implications for the effect of S atoms’ doping on geometrical structures and electronic states in armchair graphene nanoribbons with different widths. The geometric configurations, energy, charge density differences, Mulliken charges, and molecular orbitals at HOMO and LUMO energy levels are characterized. Besides the changes of bond length and bond angles, the calculation results indicate that the band structures and bandgaps of the graphene nanoribbons is affected by the nanoribbon width as well as S doping positions, where the ribbons exhibit metallic or semiconductor properties. Doping S atoms result significant changes in the charge density differences and Mulliken charges on the atoms near the doped atom. At the same time, the HOMOs and LUMOs also present differences.
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来源期刊
Materials Today Communications
Materials Today Communications Materials Science-General Materials Science
CiteScore
5.20
自引率
5.30%
发文量
1783
审稿时长
51 days
期刊介绍: Materials Today Communications is a primary research journal covering all areas of materials science. The journal offers the materials community an innovative, efficient and flexible route for the publication of original research which has not found the right home on first submission.
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