Characterization of polycrystalline bulk ferroelectric ZnSnS3 synthesized by hydrothermal method for photovoltaic application

ZnSnS, a newly theoretically predicted ferroelectric material which shows promising properties for solar cell and photovoltaic applications, was successfully grown in our laboratory by hydrothermal method. The high intensity x-ray diffraction pattern from the (211), (10), (200), (210), (310), (320), and (32) planes reveal the crystalline character of the trigonal ZnSnS phase. The microstructural property and elemental distribution were evaluated using SEM and TEM studies. Diffuse reflectance measurement at room temperature shows a direct bandgap of 2.62 eV along with a high energy direct transition of 3.13 eV. Two broad photoluminescence peaks at various temperatures (4–300 K) were also detected around (2.61–2.73 eV) and (3.04–3.11 eV). The emission characteristics are explained considering the shallow donor level to valence band transitions. Raman study elucidates that the synthesized ZnSnS possess a good number of Raman active bands. A phase transition from the ferroelectric to non-ferroelectric phase of ZnSnS is observed around 330 °C in DSC and dielectric measurements. The P-E measurement showed that the material is ferroelectric in nature with saturation polarization value of 21.85. The current-voltage characteristics showgood photovoltaic response of the fabricated Ni/ZnSnS/Ni device in the visible range indicating its application in PV devices and photodetector.