高质量超薄同质 GaAs1-xSbx 纳米线的合成与光学特性

IF 6.4 1区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY
Ran Zhuo, Lianjun Wen, Jian Wang, Xiuming Dou, Lei Liu, Xiyu Hou, Dunyuan Liao, Baoquan Sun, Dong Pan, Jianhua Zhao
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引用次数: 0

摘要

三元砷化镓 1-xSbx 纳米线具有可设计的带隙和晶格常数,在带状结构工程以及光学和光电器件方面具有重要的应用潜力。然而,GaAs1-xSbx 纳米线总是存在大直径、低纵横比甚至自发的核壳结构,这阻碍了它们在光学和光电领域的应用。在此,我们报告了通过分子束外延技术在 Si (111) 基底上可控合成超细 GaAs1-xSbx 纳米线的过程。研究发现,通过精确调节镓通量和生长温度,可以获得直径小于 40 nm、长宽比超过 35 的超薄 GaAs1-xSbx 纳米线。通过直接调节锑通量,还可以生长出大成分范围(0 ⩽ x ⩽ 0.4)的超薄 GaAs1-xSbx 纳米线。详细的结构研究证实,这些超细纳米线具有很高的晶体质量,在纳米线的轴向和径向没有观察到自发的核壳纳米结构。据我们所知,这是首次通过分子束外延技术生长出均匀的 GaAs1-xSbx 纳米线。光致发光测量结果证明,与文献报道的结果相比,超细 GaAs1-xSbx 纳米线的光致发光峰半宽度更窄,其发射波长可从 850 nm(GaAs)调谐到 1271 nm(GaAs0.6Sb0.4)。此外,通过使用 Al0.5Ga0.5As 外壳作为钝化层,超薄 GaAs1-xSbx 纳米线的光学特性还能得到进一步改善。我们的工作为开发基于 GaAs1-xSbx 纳米线的高性能光学和光电器件奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and optical properties of high-quality ultrathin homogeneous GaAs1−xSbx nanowires

Ternary GaAs1−xSbx nanowires with designable bandgaps and lattice constants show important potential applications in band structure engineering as well as optical and optoelectronic devices. However, large diameters, low aspect ratios and even spontaneous core-shell structures are always found in GaAs1−xSbx nanowires, which are hindering their optical and optoelectronic applications. Here, we report the controlled synthesis of ultrathin GaAs1−xSbx nanowires on Si (111) substrates by molecular-beam epitaxy. It is found that ultrathin GaAs1−xSbx nanowires with a diameter less than 40 nm and an aspect ratio exceeding 35 can be obtained by precisely tuning the Ga flux and the growth temperature. The growth of the ultrathin GaAs1−xSbx nanowires with a large-composition-range (0 ⩽ x ⩽ 0.4) are also achieved by directly tuning the antimony flux. Detailed structural studies confirm that these ultrathin nanowires exhibit high crystal-quality, and no spontaneous core-shell nanostructures are observed along the axial and radial directions of the nanowires. As far as we known, it is the first time that homogeneous GaAs1−xSbx nanowires are grown by molecular-beam epitaxy. Photoluminescence measurements prove that the ultrathin GaAs1−xSbx nanowires have a narrower full width at half maximum of the photoluminescence peak compared with those results reported in the literatures, and their emission wavelengths can be tuned from 850 nm (GaAs) to 1271 nm (GaAs0.6Sb0.4). In addition, the optical properties of the ultrathin GaAs1−xSbx nanowires can be further improved by using the Al0.5Ga0.5As shell as a passivation layer. Our work lays a foundation for the development of high-performance GaAs1−xSbx nanowire-based optical and optoelectronic devices.

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来源期刊
Science China Physics, Mechanics & Astronomy
Science China Physics, Mechanics & Astronomy PHYSICS, MULTIDISCIPLINARY-
CiteScore
10.30
自引率
6.20%
发文量
4047
审稿时长
3 months
期刊介绍: Science China Physics, Mechanics & Astronomy, an academic journal cosponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China, and published by Science China Press, is committed to publishing high-quality, original results in both basic and applied research. Science China Physics, Mechanics & Astronomy, is published in both print and electronic forms. It is indexed by Science Citation Index. Categories of articles: Reviews summarize representative results and achievements in a particular topic or an area, comment on the current state of research, and advise on the research directions. The author’s own opinion and related discussion is requested. Research papers report on important original results in all areas of physics, mechanics and astronomy. Brief reports present short reports in a timely manner of the latest important results.
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