Al1-xScxSbyN1-y:铁电半导体场效应晶体管的机遇

IF 6.4 1区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY
Shujin Guo, Xianghua Kong, Hong Guo
{"title":"Al1-xScxSbyN1-y:铁电半导体场效应晶体管的机遇","authors":"Shujin Guo,&nbsp;Xianghua Kong,&nbsp;Hong Guo","doi":"10.1007/s11433-024-2466-0","DOIUrl":null,"url":null,"abstract":"<div><p>For the in-memory computation architecture, a ferroelectric semiconductor field-effect transistor (FeSFET) incorporates ferroelectric material into the FET channel to realize logic and memory in a single device. The emerging group III nitride material Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>N provides an excellent platform to explore FeSFET, as this material has significant electric polarization, ferroelectric switching, and high carrier mobility. However, steps need to be taken to reduce the large band gap of ∼5 eV of Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>N to improve its transport property for in-memory logic applications. By state-of-the-art first principles analysis, here we predict that alloying a relatively small amount (less than ∼5%) of Sb impurities into Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>N very effectively reduces the band gap while maintaining excellent ferroelectricity. We show that the co-doped Sb and Sc act cooperatively to give a significant band bowing leading to a small band gap of ∼1.76 eV and a large polarization parameter ∼0.87 C/m<sup>2</sup>, in the quaternary Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>Sb<sub><i>y</i></sub>N<sub>1−<i>y</i></sub> compounds. The Sb impurity states become more continuous as a result of interactions with Sc and can be used for impurity-mediated transport. Based on the Landau-Khalatnikov model, the Landau parameters and the corresponding ferroelectric hysteresis loops are obtained for the quaternary compounds. These findings indicate that Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>Sb<sub><i>y</i></sub>N<sub>1−<i>y</i></sub> is an excellent candidate as the channel material of FeSFET.</p></div>","PeriodicalId":774,"journal":{"name":"Science China Physics, Mechanics & Astronomy","volume":"67 11","pages":""},"PeriodicalIF":6.4000,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11433-024-2466-0.pdf","citationCount":"0","resultStr":"{\"title\":\"Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor\",\"authors\":\"Shujin Guo,&nbsp;Xianghua Kong,&nbsp;Hong Guo\",\"doi\":\"10.1007/s11433-024-2466-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>For the in-memory computation architecture, a ferroelectric semiconductor field-effect transistor (FeSFET) incorporates ferroelectric material into the FET channel to realize logic and memory in a single device. The emerging group III nitride material Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>N provides an excellent platform to explore FeSFET, as this material has significant electric polarization, ferroelectric switching, and high carrier mobility. However, steps need to be taken to reduce the large band gap of ∼5 eV of Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>N to improve its transport property for in-memory logic applications. By state-of-the-art first principles analysis, here we predict that alloying a relatively small amount (less than ∼5%) of Sb impurities into Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>N very effectively reduces the band gap while maintaining excellent ferroelectricity. We show that the co-doped Sb and Sc act cooperatively to give a significant band bowing leading to a small band gap of ∼1.76 eV and a large polarization parameter ∼0.87 C/m<sup>2</sup>, in the quaternary Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>Sb<sub><i>y</i></sub>N<sub>1−<i>y</i></sub> compounds. The Sb impurity states become more continuous as a result of interactions with Sc and can be used for impurity-mediated transport. Based on the Landau-Khalatnikov model, the Landau parameters and the corresponding ferroelectric hysteresis loops are obtained for the quaternary compounds. These findings indicate that Al<sub>1−<i>x</i></sub>Sc<sub><i>x</i></sub>Sb<sub><i>y</i></sub>N<sub>1−<i>y</i></sub> is an excellent candidate as the channel material of FeSFET.</p></div>\",\"PeriodicalId\":774,\"journal\":{\"name\":\"Science China Physics, Mechanics & Astronomy\",\"volume\":\"67 11\",\"pages\":\"\"},\"PeriodicalIF\":6.4000,\"publicationDate\":\"2024-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s11433-024-2466-0.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science China Physics, Mechanics & Astronomy\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11433-024-2466-0\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Physics, Mechanics & Astronomy","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11433-024-2466-0","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

对于内存计算架构,铁电半导体场效应晶体管(FeSFET)将铁电材料纳入 FET 沟道,从而在单一器件中实现逻辑和内存。新兴的 III 族氮化物材料 Al1-xScxN 为探索铁电场效应晶体管提供了一个绝佳的平台,因为这种材料具有显著的电极化、铁电开关和高载流子迁移率。然而,需要采取措施降低 Al1-xScxN ∼ 5 eV 的大带隙,以改善其传输特性,从而实现内存逻辑应用。通过最先进的第一性原理分析,我们预测在 Al1-xScxN 中掺入相对少量(小于 ∼5%)的锑杂质可以非常有效地减小带隙,同时保持优异的铁电性。我们的研究表明,在四元 Al1-xScxSbyN1-y 化合物中,共掺杂的 Sb 和 Sc 相互配合,产生了显著的带弓效应,导致 1.76 eV 的小带隙和 0.87 C/m2 的大极化参数。由于与 Sc 的相互作用,Sb 杂质态变得更加连续,可用于杂质介导的传输。根据朗道-哈拉特尼科夫模型,得到了四元化合物的朗道参数和相应的铁电磁滞回线。这些发现表明,Al1-xScxSbyN1-y 是 FeSFET 沟道材料的绝佳候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor

For the in-memory computation architecture, a ferroelectric semiconductor field-effect transistor (FeSFET) incorporates ferroelectric material into the FET channel to realize logic and memory in a single device. The emerging group III nitride material Al1−xScxN provides an excellent platform to explore FeSFET, as this material has significant electric polarization, ferroelectric switching, and high carrier mobility. However, steps need to be taken to reduce the large band gap of ∼5 eV of Al1−xScxN to improve its transport property for in-memory logic applications. By state-of-the-art first principles analysis, here we predict that alloying a relatively small amount (less than ∼5%) of Sb impurities into Al1−xScxN very effectively reduces the band gap while maintaining excellent ferroelectricity. We show that the co-doped Sb and Sc act cooperatively to give a significant band bowing leading to a small band gap of ∼1.76 eV and a large polarization parameter ∼0.87 C/m2, in the quaternary Al1−xScxSbyN1−y compounds. The Sb impurity states become more continuous as a result of interactions with Sc and can be used for impurity-mediated transport. Based on the Landau-Khalatnikov model, the Landau parameters and the corresponding ferroelectric hysteresis loops are obtained for the quaternary compounds. These findings indicate that Al1−xScxSbyN1−y is an excellent candidate as the channel material of FeSFET.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Science China Physics, Mechanics & Astronomy
Science China Physics, Mechanics & Astronomy PHYSICS, MULTIDISCIPLINARY-
CiteScore
10.30
自引率
6.20%
发文量
4047
审稿时长
3 months
期刊介绍: Science China Physics, Mechanics & Astronomy, an academic journal cosponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China, and published by Science China Press, is committed to publishing high-quality, original results in both basic and applied research. Science China Physics, Mechanics & Astronomy, is published in both print and electronic forms. It is indexed by Science Citation Index. Categories of articles: Reviews summarize representative results and achievements in a particular topic or an area, comment on the current state of research, and advise on the research directions. The author’s own opinion and related discussion is requested. Research papers report on important original results in all areas of physics, mechanics and astronomy. Brief reports present short reports in a timely manner of the latest important results.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信