三维拓扑绝缘体薄膜中的非线性霍尔系数

IF 1.4 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2024-09-17 DOI:10.1134/S0021364024602367

N. P. Stepina, A. O. Bazhenov, A. V. Shumilin, E. Yu. Zhdanov, D. V. Ishchenko, V. V. Kirienko, M. S. Aksenov, O. E. Tereshchenko

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引用次数: 0

摘要

研究了在三维拓扑绝缘体 (Bi,Sb)2(Te,Se)3薄膜上制造的晶体管结构中的磁阻和霍尔效应。研究表明，低磁场下的负磁阻是通过量子修正电导率来描述的。这些修正的大小取决于栅极电压，并在接近电荷中性点时增大。在任何栅极电压下，霍尔系数 RH 在低磁场下都是非线性的，而 RH 非线性在高负栅电压下最为明显。在高磁场下，霍尔系数的磁场相关性斜率在某个栅极电压下会改变其符号。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

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Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

The magnetoresistance and the Hall effect in transistor structures fabricated on films of the three-dimensional topological insulator (Bi,Sb)₂(Te,Se)₃ are studied. It is shown that the negative magnetoresistance at low magnetic field is described in terms of quantum corrections to the conductivity. The magnitude of these corrections depends on the gate voltage and increases when approaching the charge neutrality point. The Hall coefficient R_H is nonlinear at low magnetic fields for any gate voltage, and the R_H nonlinearity is the most pronounced at high negative gate voltages. At high fields, the slope of the magnetic field dependence of the Hall coefficient changes its sign at some gate voltage.

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来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.