{"title":"利用部分栅极凹槽结构提高增强型β-Ga2O3 MOSFET 的性能","authors":"Yueh-Han Chuang, Fu-Gow Tarntair, Pei-Jung Wang, Tian-Li Wu, Niall Tumilty, Ray-Hua Horng","doi":"10.1021/acsaelm.4c00835","DOIUrl":null,"url":null,"abstract":"In this study, β-Ga<sub>2</sub>O<sub>3</sub> films were grown on the c-plane sapphire substrate by metal–organic chemical vapor deposition. Gate-recessed heteroepitaxial β-Ga<sub>2</sub>O<sub>3</sub> metal oxide semiconductor field effect transistors (MOSFETs) were fabricated to achieve enhanced mode operation. It was found that the conductivity of Ga<sub>2</sub>O<sub>3</sub> films can be further improved by in situ doping and a partial gate recess. Output current increased from 4.21 to 5.76 mA/mm, <i>R</i><sub>on.sp</sub> decreased from 392 mΩ.cm<sup>2</sup> to 238 mΩ.cm<sup>2</sup>,and μ<sub>FE</sub> increased from 15 cm<sup>2</sup>/(V s) to 19.9 cm<sup>2</sup>/(V s) for MOSFETs with partial gate recesses of 7 and 5 μm, respectively. Device threshold voltages are positive, possessing low <i>R</i><sub>on</sub> and impressive <i>I</i><sub>D</sub> on/off ratios. Breakdown voltage was increased using a gate field plate. In summary, device performance was improved using shorter gate recesses for enhanced mode β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs.","PeriodicalId":4,"journal":{"name":"ACS Applied Energy Materials","volume":null,"pages":null},"PeriodicalIF":5.4000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Improvement of Enhanced-Mode β-Ga2O3 MOSFETs by Partial Gate Recess Structure\",\"authors\":\"Yueh-Han Chuang, Fu-Gow Tarntair, Pei-Jung Wang, Tian-Li Wu, Niall Tumilty, Ray-Hua Horng\",\"doi\":\"10.1021/acsaelm.4c00835\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, β-Ga<sub>2</sub>O<sub>3</sub> films were grown on the c-plane sapphire substrate by metal–organic chemical vapor deposition. Gate-recessed heteroepitaxial β-Ga<sub>2</sub>O<sub>3</sub> metal oxide semiconductor field effect transistors (MOSFETs) were fabricated to achieve enhanced mode operation. It was found that the conductivity of Ga<sub>2</sub>O<sub>3</sub> films can be further improved by in situ doping and a partial gate recess. Output current increased from 4.21 to 5.76 mA/mm, <i>R</i><sub>on.sp</sub> decreased from 392 mΩ.cm<sup>2</sup> to 238 mΩ.cm<sup>2</sup>,and μ<sub>FE</sub> increased from 15 cm<sup>2</sup>/(V s) to 19.9 cm<sup>2</sup>/(V s) for MOSFETs with partial gate recesses of 7 and 5 μm, respectively. Device threshold voltages are positive, possessing low <i>R</i><sub>on</sub> and impressive <i>I</i><sub>D</sub> on/off ratios. Breakdown voltage was increased using a gate field plate. In summary, device performance was improved using shorter gate recesses for enhanced mode β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs.\",\"PeriodicalId\":4,\"journal\":{\"name\":\"ACS Applied Energy Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.4000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Energy Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsaelm.4c00835\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Energy Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsaelm.4c00835","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Performance Improvement of Enhanced-Mode β-Ga2O3 MOSFETs by Partial Gate Recess Structure
In this study, β-Ga2O3 films were grown on the c-plane sapphire substrate by metal–organic chemical vapor deposition. Gate-recessed heteroepitaxial β-Ga2O3 metal oxide semiconductor field effect transistors (MOSFETs) were fabricated to achieve enhanced mode operation. It was found that the conductivity of Ga2O3 films can be further improved by in situ doping and a partial gate recess. Output current increased from 4.21 to 5.76 mA/mm, Ron.sp decreased from 392 mΩ.cm2 to 238 mΩ.cm2,and μFE increased from 15 cm2/(V s) to 19.9 cm2/(V s) for MOSFETs with partial gate recesses of 7 and 5 μm, respectively. Device threshold voltages are positive, possessing low Ron and impressive ID on/off ratios. Breakdown voltage was increased using a gate field plate. In summary, device performance was improved using shorter gate recesses for enhanced mode β-Ga2O3 MOSFETs.
期刊介绍:
ACS Applied Energy Materials is an interdisciplinary journal publishing original research covering all aspects of materials, engineering, chemistry, physics and biology relevant to energy conversion and storage. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important energy applications.