二维拓扑绝缘体边缘双量子点中束缚态的形成及其定位控制

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040109

E. A. Lavrukhina, D. V. Khomitsky, A. V. Telezhnikov

{"title":"二维拓扑绝缘体边缘双量子点中束缚态的形成及其定位控制","authors":"E. A. Lavrukhina, D. V. Khomitsky, A. V. Telezhnikov","doi":"10.1134/s1063782624040109","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The model of the bound states in a double quantum dot formed by three magnetic barriers at the edge of two-dimensional topological insulator based on HgTe/CdTe quantum well is developed. The peculiarities of the energy spectrum, the probability density and the spin density of the quantum states are studied as a function of the orientation of the magnetization vector for the magnetic barriers. The wavefunction localization at the left and at the right of the anticrossing point in the spectrum is studied and the conclusion is made on the possibility of switching between the states with the localization area in different quantum dots by varying the polarization of the middle barrier.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"20 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Formation of Bound States and Control of Their Localization in a Double Quantum Dot at the Edge of the Two-Dimensional Topological Insulator with Magnetic Barriers\",\"authors\":\"E. A. Lavrukhina, D. V. Khomitsky, A. V. Telezhnikov\",\"doi\":\"10.1134/s1063782624040109\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The model of the bound states in a double quantum dot formed by three magnetic barriers at the edge of two-dimensional topological insulator based on HgTe/CdTe quantum well is developed. The peculiarities of the energy spectrum, the probability density and the spin density of the quantum states are studied as a function of the orientation of the magnetization vector for the magnetic barriers. The wavefunction localization at the left and at the right of the anticrossing point in the spectrum is studied and the conclusion is made on the possibility of switching between the states with the localization area in different quantum dots by varying the polarization of the middle barrier.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"20 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624040109\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624040109","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

摘要建立了基于 HgTe/CdTe 量子阱的二维拓扑绝缘体边缘由三个磁势垒形成的双量子点中的束缚态模型。研究了量子态的能谱、概率密度和自旋密度与磁栅磁化矢量方向的函数关系。研究了能谱中反交叉点左侧和右侧的波函数局域化，并得出结论：通过改变中间势垒的极化，可以在不同量子点的局域化区域的状态之间切换。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Formation of Bound States and Control of Their Localization in a Double Quantum Dot at the Edge of the Two-Dimensional Topological Insulator with Magnetic Barriers

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Formation of Bound States and Control of Their Localization in a Double Quantum Dot at the Edge of the Two-Dimensional Topological Insulator with Magnetic Barriers

Abstract

The model of the bound states in a double quantum dot formed by three magnetic barriers at the edge of two-dimensional topological insulator based on HgTe/CdTe quantum well is developed. The peculiarities of the energy spectrum, the probability density and the spin density of the quantum states are studied as a function of the orientation of the magnetization vector for the magnetic barriers. The wavefunction localization at the left and at the right of the anticrossing point in the spectrum is studied and the conclusion is made on the possibility of switching between the states with the localization area in different quantum dots by varying the polarization of the middle barrier.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.