升华法生长的 AlN/SiC 模板的位错结构

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040079

A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin

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引用次数: 0

摘要

摘要利用透射电子显微镜研究了通过升华法在碳化硅衬底上生长的氮化铝层的位错结构。这种生长方法的特点是在层生长过程中蒸发基底以防止其开裂。研究的目的是确定氮化铝层中穿线位错的来源。在该层中发现了作为位错来源的位错超级夹角。研究假定超节的形成与基底蒸发过程有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Dislocation Structure of AlN/SiC Templates Grown by Sublimation

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Dislocation Structure of AlN/SiC Templates Grown by Sublimation

Abstract

The dislocation structure of an AlN layer grown on a SiC substrate by sublimation was studied using transmission electron microscopy. The peculiarity of the growth method was the evaporation of the substrate during the growth of the layer to prevent its cracking. The purpose of the study was to identify the sources of threading dislocations in the AlN layer. Dislocation superjogs, which are sources of dislocations, were found in the layer. A connection between the formation of superjogs and the procedure of substrate evaporation is assumed.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.