高温扩散掺杂铬的 CVD-ZnSe 发光特性

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040067

V. P. Kalinushkin, A. A. Gladilin, O. V. Uvarov, S. A. Mironov, N. N. Ilichev, M. I. Studenikin, M. S. Storozhevykh, E. M. Gavrishchuk, V. B. Ikonnikov, N. A. Timofeeva

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引用次数: 0

摘要

摘要利用双光子共聚焦显微镜在 0.44-0.73 μm 光谱范围内研究了采用 HIP 工艺掺杂铬的 CVD-ZnSe 发光特性的空间分布。结果表明，该工艺在晶体中形成了四种类型的杂质-缺陷中心。研究表明，它们的形成涉及在掺杂区形成并向晶体深处扩散的点中心。对这些点中心的性质进行了假设。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Luminescence Characteristics of Chromium-Doped by High-Temperature Diffusion CVD-ZnSe

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Luminescence Characteristics of Chromium-Doped by High-Temperature Diffusion CVD-ZnSe

Abstract

Using two-photon confocal microscopy in the spectral range of 0.44–0.73 μm, the spatial distribution of the luminescent characteristics of CVD-ZnSe doped with chromium using the HIP process was studied. It has been established that as a result of this process, four types of impurity-defect centers are formed in the crystal. It is shown that their formation involves point centers that form in the doping zone and diffuse deep into the crystal. Assumptions are made about the nature of these point centers.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.