Ayasha Siddeka, Tanvir Mahtab Khan, Md. Raton Ali, Adnan Hosen, Md. Ferdous Rahman, Sheikh Rashel Al Ahmed
{"title":"利用二硫化钨电子传输层和三氧化钼空穴传输层提高 SnS 太阳能电池的性能","authors":"Ayasha Siddeka, Tanvir Mahtab Khan, Md. Raton Ali, Adnan Hosen, Md. Ferdous Rahman, Sheikh Rashel Al Ahmed","doi":"10.1002/pssa.202400547","DOIUrl":null,"url":null,"abstract":"Herein, a new heterojunction photovoltaic (PV) device is designed by incorporating molybdenum trioxide (MoO<jats:sub>3</jats:sub>) as a hole transport layer (HTL), tin sulfide (SnS) as an absorber, and tungsten disulfide (WS<jats:sub>2</jats:sub>) as an electron transport layer (ETL). The PV outputs of the proposed thin‐film solar cell (TFSC) of Ni/MoO<jats:sub>3</jats:sub>/SnS/WS<jats:sub>2</jats:sub>/FTO/Al are investigated using the widely used solar cell simulator (SCAPS‐1D). It is found that the SnS TFSC with suitable band alignments at both the SnS/WS<jats:sub>2</jats:sub> and MoO<jats:sub>3</jats:sub>/SnS interfaces gives better photoconversion efficiency than the conventional one. To optimize the material properties, the performance parameters, including open‐circuit voltage (<jats:italic>V</jats:italic><jats:sub>oc</jats:sub>), short‐circuit current density (<jats:italic>J</jats:italic><jats:sub>sc</jats:sub>), fill factor (FF), and efficiency, have been calculated by varying the influences of the material's thickness, doping concentration, bulk and interface defect densities, operational temperature, and work function of back‐contact. At optimized thicknesses of 0.1 μm for MoO<jats:sub>3</jats:sub> HTL and 1.0 μm for SnS absorber, the efficiency is estimated to be 30.42% with <jats:italic>V</jats:italic><jats:sub>oc</jats:sub> of 1.02 V, <jats:italic>J</jats:italic><jats:sub>sc</jats:sub> of 34.38 mA cm<jats:sup>−2</jats:sup>, and FF of 87.04% for the suggested TFSC. These outcomes imply that the nontoxic MoO<jats:sub>3</jats:sub> and WS<jats:sub>2</jats:sub> materials can be applied as HTL and ETL into the inexpensive, highly efficient, and environmentally friendly SnS‐based PV cell.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Enhancement of SnS Solar Cell with Tungsten Disulfide Electron Transport Layer and Molybdenum Trioxide Hole Transport Layer\",\"authors\":\"Ayasha Siddeka, Tanvir Mahtab Khan, Md. Raton Ali, Adnan Hosen, Md. Ferdous Rahman, Sheikh Rashel Al Ahmed\",\"doi\":\"10.1002/pssa.202400547\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Herein, a new heterojunction photovoltaic (PV) device is designed by incorporating molybdenum trioxide (MoO<jats:sub>3</jats:sub>) as a hole transport layer (HTL), tin sulfide (SnS) as an absorber, and tungsten disulfide (WS<jats:sub>2</jats:sub>) as an electron transport layer (ETL). The PV outputs of the proposed thin‐film solar cell (TFSC) of Ni/MoO<jats:sub>3</jats:sub>/SnS/WS<jats:sub>2</jats:sub>/FTO/Al are investigated using the widely used solar cell simulator (SCAPS‐1D). It is found that the SnS TFSC with suitable band alignments at both the SnS/WS<jats:sub>2</jats:sub> and MoO<jats:sub>3</jats:sub>/SnS interfaces gives better photoconversion efficiency than the conventional one. To optimize the material properties, the performance parameters, including open‐circuit voltage (<jats:italic>V</jats:italic><jats:sub>oc</jats:sub>), short‐circuit current density (<jats:italic>J</jats:italic><jats:sub>sc</jats:sub>), fill factor (FF), and efficiency, have been calculated by varying the influences of the material's thickness, doping concentration, bulk and interface defect densities, operational temperature, and work function of back‐contact. At optimized thicknesses of 0.1 μm for MoO<jats:sub>3</jats:sub> HTL and 1.0 μm for SnS absorber, the efficiency is estimated to be 30.42% with <jats:italic>V</jats:italic><jats:sub>oc</jats:sub> of 1.02 V, <jats:italic>J</jats:italic><jats:sub>sc</jats:sub> of 34.38 mA cm<jats:sup>−2</jats:sup>, and FF of 87.04% for the suggested TFSC. These outcomes imply that the nontoxic MoO<jats:sub>3</jats:sub> and WS<jats:sub>2</jats:sub> materials can be applied as HTL and ETL into the inexpensive, highly efficient, and environmentally friendly SnS‐based PV cell.\",\"PeriodicalId\":20074,\"journal\":{\"name\":\"Physica Status Solidi A-applications and Materials Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi A-applications and Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202400547\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400547","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Performance Enhancement of SnS Solar Cell with Tungsten Disulfide Electron Transport Layer and Molybdenum Trioxide Hole Transport Layer
Herein, a new heterojunction photovoltaic (PV) device is designed by incorporating molybdenum trioxide (MoO3) as a hole transport layer (HTL), tin sulfide (SnS) as an absorber, and tungsten disulfide (WS2) as an electron transport layer (ETL). The PV outputs of the proposed thin‐film solar cell (TFSC) of Ni/MoO3/SnS/WS2/FTO/Al are investigated using the widely used solar cell simulator (SCAPS‐1D). It is found that the SnS TFSC with suitable band alignments at both the SnS/WS2 and MoO3/SnS interfaces gives better photoconversion efficiency than the conventional one. To optimize the material properties, the performance parameters, including open‐circuit voltage (Voc), short‐circuit current density (Jsc), fill factor (FF), and efficiency, have been calculated by varying the influences of the material's thickness, doping concentration, bulk and interface defect densities, operational temperature, and work function of back‐contact. At optimized thicknesses of 0.1 μm for MoO3 HTL and 1.0 μm for SnS absorber, the efficiency is estimated to be 30.42% with Voc of 1.02 V, Jsc of 34.38 mA cm−2, and FF of 87.04% for the suggested TFSC. These outcomes imply that the nontoxic MoO3 and WS2 materials can be applied as HTL and ETL into the inexpensive, highly efficient, and environmentally friendly SnS‐based PV cell.
期刊介绍:
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.