Khawla S. Khashan, Aseel A. Hadi, Hawraa M. Abdul-Redaa
{"title":"用激光烧蚀法简便且环保地制备 In2O3NP/MWCNTs 异质结构作为高性能光电探测器的途径","authors":"Khawla S. Khashan, Aseel A. Hadi, Hawraa M. Abdul-Redaa","doi":"10.1007/s11468-024-02524-w","DOIUrl":null,"url":null,"abstract":"<p>Colloidal In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs heterostructure (NPs) were successfully synthesized by a facile one-step Q-switched Nd: YAG laser ablation of indium target in CNTs suspension at room temperature. Raman spectroscopy and optical absorption analysis of the prepared samples confirmed the formation of In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs heterostructure. Transmission electron microscope (TEM) investigation of In<sub>2</sub>O<sub>3</sub>-CNTs structure and pure In<sub>2</sub>O<sub>3</sub> nanoparticles revealed the formation of spherical nanoparticles with average size of 66 nm and 19 nm, respectively. The heterojunction photodetectors were fabricated by drop casting of colloidal In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs NPs onto a single crystal silicon wafer. I–V characteristics of the In<sub>2</sub>O<sub>3</sub>NPs/Si and In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs/Si heterojunctions under both dark and light conditions revealed rectifying properties and good photo-response. The built-in voltage was determined from the C–V measurements which revealed an abrupt junction and their values of 1.05 V and 0.59 V for In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs/Si and In<sub>2</sub>O<sub>3</sub>NPs/Si, respectively. In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs/Si photodetector demonstrated the highest responsivity and quantum efficiency of 1.3 A/W and 3.5 × 10<sup>2</sup>% at 450 nm, respectively. This In<sub>2</sub>O<sub>3</sub>-MWCNTs heterostructure-based photodetector with improved performance may open the door to effective Vis–NIR photodetection applications.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":736,"journal":{"name":"Plasmonics","volume":"74 1","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Facile and Eco-Friendly Fabrication Route of In2O3NP/MWCNTs Heterostructure as High-Performance Photodetectors by Laser Ablation Method\",\"authors\":\"Khawla S. Khashan, Aseel A. Hadi, Hawraa M. Abdul-Redaa\",\"doi\":\"10.1007/s11468-024-02524-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Colloidal In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs heterostructure (NPs) were successfully synthesized by a facile one-step Q-switched Nd: YAG laser ablation of indium target in CNTs suspension at room temperature. Raman spectroscopy and optical absorption analysis of the prepared samples confirmed the formation of In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs heterostructure. Transmission electron microscope (TEM) investigation of In<sub>2</sub>O<sub>3</sub>-CNTs structure and pure In<sub>2</sub>O<sub>3</sub> nanoparticles revealed the formation of spherical nanoparticles with average size of 66 nm and 19 nm, respectively. The heterojunction photodetectors were fabricated by drop casting of colloidal In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs NPs onto a single crystal silicon wafer. I–V characteristics of the In<sub>2</sub>O<sub>3</sub>NPs/Si and In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs/Si heterojunctions under both dark and light conditions revealed rectifying properties and good photo-response. The built-in voltage was determined from the C–V measurements which revealed an abrupt junction and their values of 1.05 V and 0.59 V for In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs/Si and In<sub>2</sub>O<sub>3</sub>NPs/Si, respectively. In<sub>2</sub>O<sub>3</sub>NPs-MWCNTs/Si photodetector demonstrated the highest responsivity and quantum efficiency of 1.3 A/W and 3.5 × 10<sup>2</sup>% at 450 nm, respectively. This In<sub>2</sub>O<sub>3</sub>-MWCNTs heterostructure-based photodetector with improved performance may open the door to effective Vis–NIR photodetection applications.</p><h3 data-test=\\\"abstract-sub-heading\\\">Graphical Abstract</h3>\",\"PeriodicalId\":736,\"journal\":{\"name\":\"Plasmonics\",\"volume\":\"74 1\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2024-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Plasmonics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1007/s11468-024-02524-w\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasmonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1007/s11468-024-02524-w","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Facile and Eco-Friendly Fabrication Route of In2O3NP/MWCNTs Heterostructure as High-Performance Photodetectors by Laser Ablation Method
Colloidal In2O3NPs-MWCNTs heterostructure (NPs) were successfully synthesized by a facile one-step Q-switched Nd: YAG laser ablation of indium target in CNTs suspension at room temperature. Raman spectroscopy and optical absorption analysis of the prepared samples confirmed the formation of In2O3NPs-MWCNTs heterostructure. Transmission electron microscope (TEM) investigation of In2O3-CNTs structure and pure In2O3 nanoparticles revealed the formation of spherical nanoparticles with average size of 66 nm and 19 nm, respectively. The heterojunction photodetectors were fabricated by drop casting of colloidal In2O3NPs-MWCNTs NPs onto a single crystal silicon wafer. I–V characteristics of the In2O3NPs/Si and In2O3NPs-MWCNTs/Si heterojunctions under both dark and light conditions revealed rectifying properties and good photo-response. The built-in voltage was determined from the C–V measurements which revealed an abrupt junction and their values of 1.05 V and 0.59 V for In2O3NPs-MWCNTs/Si and In2O3NPs/Si, respectively. In2O3NPs-MWCNTs/Si photodetector demonstrated the highest responsivity and quantum efficiency of 1.3 A/W and 3.5 × 102% at 450 nm, respectively. This In2O3-MWCNTs heterostructure-based photodetector with improved performance may open the door to effective Vis–NIR photodetection applications.
期刊介绍：
Plasmonics is an international forum for the publication of peer-reviewed leading-edge original articles that both advance and report our knowledge base and practice of the interactions of free-metal electrons, Plasmons.
Topics covered include notable advances in the theory, Physics, and applications of surface plasmons in metals, to the rapidly emerging areas of nanotechnology, biophotonics, sensing, biochemistry and medicine. Topics, including the theory, synthesis and optical properties of noble metal nanostructures, patterned surfaces or materials, continuous or grated surfaces, devices, or wires for their multifarious applications are particularly welcome. Typical applications might include but are not limited to, surface enhanced spectroscopic properties, such as Raman scattering or fluorescence, as well developments in techniques such as surface plasmon resonance and near-field scanning optical microscopy.
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