{"title":"在原生氮化镓衬底上通过 HVPE 生长的氮化镓基垂直氮化镓 SBD 中的泄漏电流","authors":"Weiyi Jin, Yumin Zhang, Songyuan Xia, Qizhi Zhu, Yuanhang Sun, Juemin Yi, Jianfeng Wang, Ke Xu","doi":"10.1063/5.0208706","DOIUrl":null,"url":null,"abstract":"This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.","PeriodicalId":7619,"journal":{"name":"AIP Advances","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates\",\"authors\":\"Weiyi Jin, Yumin Zhang, Songyuan Xia, Qizhi Zhu, Yuanhang Sun, Juemin Yi, Jianfeng Wang, Ke Xu\",\"doi\":\"10.1063/5.0208706\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.\",\"PeriodicalId\":7619,\"journal\":{\"name\":\"AIP Advances\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"AIP Advances\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0208706\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"AIP Advances","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0208706","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
本研究调查了垂直氮化镓-氮化镓肖特基势垒二极管(SBD)的漏电机制,并展示了有效的缓解策略。所制备的器件具有较低的反向漏电流(-200 V 时为 1 × 10-5 A/cm2 )和较高的离子/关断比(∼1010),其性能超过了国外衬底上的 GaN SBD。我们阐明了主要的漏电机制--热离子发射、普尔-弗伦克尔发射和变程跳变--及其随温度和偏压的演变。优化的制造工艺(包括缺陷蚀刻和新型双层钝化技术)使漏电流降低了 1000 多倍。
Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.
期刊介绍:
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