用于水库计算系统的蒸发铜基 Perovskite 动态晶闸管

Ruiheng Wang, He Shao, Jianyu Ming, Wei Yang, Jintao Sun, Benxin Liu, Siqi Wu, Haifeng Ling
{"title":"用于水库计算系统的蒸发铜基 Perovskite 动态晶闸管","authors":"Ruiheng Wang, He Shao, Jianyu Ming, Wei Yang, Jintao Sun, Benxin Liu, Siqi Wu, Haifeng Ling","doi":"10.1002/admt.202400838","DOIUrl":null,"url":null,"abstract":"Dynamic memristors are considered as the optimal hardware devices for reservoir computing (RC) enabled by their nonlinear conductance variations. This significantly reduces the extensive training workload typically required by traditional neural networks. Lead halide perovskites, with their tunable band structure and active ion migration properties, have emerged as highly promising materials for developing dynamic memristors. However, large-scale and consistently stable production remains a challenge for perovskite functional films, while lead elements' toxicity and environmental impact also partly restrict their practical device utilization. In this work, lead-free copper-based perovskite (i.e., CsCu<sub>2</sub>I<sub>3</sub>) films are prepared by thermal evaporation for constructing dynamic memristors. The effective conductivity modulation of CsCu<sub>2</sub>I<sub>3</sub>-based memristor can be utilized in artificial neural networks, achieving a high handwritten digit recognition accuracy of 91.2%. In addition, the RC system is also constructed based on the dynamic behavior of the devices, by which a letter recognition accuracy of 98.2% with simple training is achieved. This technology provides a feasible pathway to construct copper-based perovskite dynamic memristors for future neural network information processing.","PeriodicalId":7200,"journal":{"name":"Advanced Materials & Technologies","volume":"5 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaporated Copper-Based Perovskite Dynamic Memristors for Reservoir Computing Systems\",\"authors\":\"Ruiheng Wang, He Shao, Jianyu Ming, Wei Yang, Jintao Sun, Benxin Liu, Siqi Wu, Haifeng Ling\",\"doi\":\"10.1002/admt.202400838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dynamic memristors are considered as the optimal hardware devices for reservoir computing (RC) enabled by their nonlinear conductance variations. This significantly reduces the extensive training workload typically required by traditional neural networks. Lead halide perovskites, with their tunable band structure and active ion migration properties, have emerged as highly promising materials for developing dynamic memristors. However, large-scale and consistently stable production remains a challenge for perovskite functional films, while lead elements' toxicity and environmental impact also partly restrict their practical device utilization. In this work, lead-free copper-based perovskite (i.e., CsCu<sub>2</sub>I<sub>3</sub>) films are prepared by thermal evaporation for constructing dynamic memristors. The effective conductivity modulation of CsCu<sub>2</sub>I<sub>3</sub>-based memristor can be utilized in artificial neural networks, achieving a high handwritten digit recognition accuracy of 91.2%. In addition, the RC system is also constructed based on the dynamic behavior of the devices, by which a letter recognition accuracy of 98.2% with simple training is achieved. This technology provides a feasible pathway to construct copper-based perovskite dynamic memristors for future neural network information processing.\",\"PeriodicalId\":7200,\"journal\":{\"name\":\"Advanced Materials & Technologies\",\"volume\":\"5 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials & Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/admt.202400838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials & Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/admt.202400838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

动态忆阻器因其非线性电导变化而被视为水库计算(RC)的最佳硬件设备。这大大减少了传统神经网络通常需要的大量训练工作量。卤化铅包晶石具有可调带状结构和活性离子迁移特性,已成为开发动态忆阻器的极有前途的材料。然而,大规模和持续稳定的生产仍然是包晶功能薄膜所面临的挑战,而铅元素的毒性和对环境的影响也在一定程度上限制了它们在实际器件中的应用。本研究通过热蒸发法制备了无铅铜基透辉石(即 CsCu2I3)薄膜,用于构建动态忆阻器。基于 CsCu2I3 的忆阻器的有效电导率调制可用于人工神经网络,实现高达 91.2% 的手写数字识别准确率。此外,还根据器件的动态行为构建了 RC 系统,通过简单的训练实现了 98.2% 的字母识别准确率。这项技术为构建铜基过氧化物动态忆阻器提供了一条可行的途径,可用于未来的神经网络信息处理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Evaporated Copper-Based Perovskite Dynamic Memristors for Reservoir Computing Systems

Evaporated Copper-Based Perovskite Dynamic Memristors for Reservoir Computing Systems
Dynamic memristors are considered as the optimal hardware devices for reservoir computing (RC) enabled by their nonlinear conductance variations. This significantly reduces the extensive training workload typically required by traditional neural networks. Lead halide perovskites, with their tunable band structure and active ion migration properties, have emerged as highly promising materials for developing dynamic memristors. However, large-scale and consistently stable production remains a challenge for perovskite functional films, while lead elements' toxicity and environmental impact also partly restrict their practical device utilization. In this work, lead-free copper-based perovskite (i.e., CsCu2I3) films are prepared by thermal evaporation for constructing dynamic memristors. The effective conductivity modulation of CsCu2I3-based memristor can be utilized in artificial neural networks, achieving a high handwritten digit recognition accuracy of 91.2%. In addition, the RC system is also constructed based on the dynamic behavior of the devices, by which a letter recognition accuracy of 98.2% with simple training is achieved. This technology provides a feasible pathway to construct copper-based perovskite dynamic memristors for future neural network information processing.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信