通过脉冲硅掺杂与 MOCVD 在同位β-Ga2O3 薄膜中实现高效掺杂结果

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Yao Wang, Qian Feng, Wenkai Wu, Yuhong Liu, Yachao Zhang, Jincheng Zhang, Yue Hao
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引用次数: 0

摘要

利用金属有机化学气相沉积技术,在 (010) β-Ga2O3 基底上沉积了脉冲掺杂硅的同外延氧化镓 (β-Ga2O3)薄膜。研究了硅脉冲占空比对薄膜形貌、结构和电性能的影响。所有掺杂薄膜的 (020) 摇摆曲线的半最大全宽(fwhm)均小于 55 弧秒,表明晶体质量很高。与连续掺入硅相比,采用脉冲宽度调制掺入硅可将表面粗糙度降低约 2.83 至 9.32 倍。值得注意的是,在硅源通气时间为 0.3 分钟、运行时间为 0.1 分钟的条件下,活化率高达 99.1%,实现了电气性能的最大化。这包括在载流子浓度为 3.35 × 1019 cm-3 时,实现了 0.0042 Ω-cm 的最低电阻率和 44.1 cm2/(V s) 的电子迁移率。脉冲硅掺杂的应用为硅原子提供了充足的扩散时间,实现了有效掺杂,从而提高了薄膜的高载流子浓度电性能,为其在超宽带隙半导体器件中用作欧姆触点提供了有效途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

High-Efficiency Doping Outcomes in Homoepitaxial β-Ga2O3 Films via Pulsed Si Doping with MOCVD

High-Efficiency Doping Outcomes in Homoepitaxial β-Ga2O3 Films via Pulsed Si Doping with MOCVD
Using metal–organic chemical vapor deposition, pulsed Si-doped homoepitaxial gallium oxide (β-Ga2O3) films were deposited on (010) β-Ga2O3 substrates. The impact of the Si pulse duty cycle on the morphology, structure, and electrical properties of the films was investigated. The full width at half-maximum (fwhm) of the (020) rocking curves for all doped films was less than 55 arcsec, indicating high crystal quality. Employing pulse width modulation of Si doping, as opposed to continuous Si doping, has resulted in a reduction in surface roughness by approximately 2.83 to 9.32 times. Notably, under the conditions of a 0.3 min Si source vent time and a 0.1 min run, an activation ratio of up to 99.1% was achieved, maximizing the electrical performance. This included achieving the lowest resistivity of 0.0042 Ω·cm and an electron mobility of 44.1 cm2/(V s) at a carrier concentration of 3.35 × 1019 cm–3. The application of pulsed Si doping provided sufficient diffusion time for Si atoms, enabling effective doping and thereby enhancing the high carrier concentration electrical performance of the films, offering an effective pathway for their use as ohmic contacts in ultrawide-bandgap semiconductor devices.
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
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