NaNbO3、AgNbO3 和 KNbO3 的局部结构和电子结构

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-09-12 DOI:10.35848/1347-4065/ad72fc

Yasuhiro Yoneda, Tohru Kobayashi, Takuya Tsuji, Daiju Matsumura, Yuji Saitoh and Yuji Noguchi

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引用次数: 0

摘要

众所周知，具有 ABO3 型包晶体系的 NaNbO3、AgNbO3 和 KNbO3 具有良好的铁电特性。在它们的传统平均结构中，A-位离子尺寸的变化会改变相关的容限因子。在这里，我们通过局部结构分析直接确定了每个原子的响度空间。通过结合原子对分布函数和扩展 X 射线吸收精细结构，该分析揭示了具有较大波动的成键位点随离子尺寸的变化而变化。包括软 X 射线吸收光谱在内的实验证据表明，A 位离子与氧杂化。

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Local and electronic structures of NaNbO3, AgNbO3, and KNbO3

NaNbO3, AgNbO3, and KNbO3 with ABO3-type perovskite systems are known to possess good ferroelectric properties. In their traditional average structure, a change in the A-site ion size changes the involved tolerance factor. Herein, we directly determined the rattling space of each atom through local structure analysis. By combining a pair distribution function and an extended X-ray absorption fine structure, this analysis revealed that the bonding sites with large fluctuations varied with varying ion sizes. Experimental evidence including soft X-ray absorption spectroscopy, indicates that the A-site ions are hybridized with oxygen.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS