CdS:In/Cu2ZnSn(S,Se)4 异质结的低温退火可提高 14.5% 效率的 Kesterite 太阳能电池

IF 19.3 1区材料科学 Q1 CHEMISTRY, PHYSICAL

ACS Energy Letters Pub Date : 2024-09-19 DOI:10.1021/acsenergylett.4c02118

Jianming Xu, Changcheng Cui, Dongxing Kou, Zucheng Wu, Wenhui Zhou, Zhengji Zhou, Shengjie Yuan, Yafang Qi, Yuena Meng, Litao Han, Sixin Wu

{"title":"CdS:In/Cu2ZnSn(S,Se)4 异质结的低温退火可提高 14.5% 效率的 Kesterite 太阳能电池","authors":"Jianming Xu, Changcheng Cui, Dongxing Kou, Zucheng Wu, Wenhui Zhou, Zhengji Zhou, Shengjie Yuan, Yafang Qi, Yuena Meng, Litao Han, Sixin Wu","doi":"10.1021/acsenergylett.4c02118","DOIUrl":null,"url":null,"abstract":"The persistent challenge in kesterite solar cells is the low open-circuit voltage (Voc) and fill factor (FF) due to nonradiative recombination at the CdS/Cu2ZnSn(S,Se)4 (CZTSSe) interface. Here we demonstrate a convenient combination of low-temperature annealing and In doping within the buffer layer to establish an electrically benign high-quality CdS:In/CZTSSe heterojunction. The low-temperature annealing facilitates the migration of Cu, Zn, and Sn impurity elements from the buffer layer to the absorber side, improving lattice match and reducing detrimental defects and the conduction band offset (CBO) barrier involving large recombination losses. The In doping boosts the donor concentration and crystallinity of the buffer layer, thereby improving the electron transport and extraction processes. Consequently, the CdS:In device achieves the highest efficiency of 14.5% with the Voc,deficit decreasing from 348 mV to 287 mV and the FF increasing from 66.6% to 70.3%, promising a significant efficiency leap for CZTSSe solar cells.","PeriodicalId":16,"journal":{"name":"ACS Energy Letters ","volume":null,"pages":null},"PeriodicalIF":19.3000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Temperature Annealing of CdS:In/Cu2ZnSn(S,Se)4 Heterojunction Boosting 14.5% Efficiency Kesterite Solar Cells\",\"authors\":\"Jianming Xu, Changcheng Cui, Dongxing Kou, Zucheng Wu, Wenhui Zhou, Zhengji Zhou, Shengjie Yuan, Yafang Qi, Yuena Meng, Litao Han, Sixin Wu\",\"doi\":\"10.1021/acsenergylett.4c02118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The persistent challenge in kesterite solar cells is the low open-circuit voltage (Voc) and fill factor (FF) due to nonradiative recombination at the CdS/Cu2ZnSn(S,Se)4 (CZTSSe) interface. Here we demonstrate a convenient combination of low-temperature annealing and In doping within the buffer layer to establish an electrically benign high-quality CdS:In/CZTSSe heterojunction. The low-temperature annealing facilitates the migration of Cu, Zn, and Sn impurity elements from the buffer layer to the absorber side, improving lattice match and reducing detrimental defects and the conduction band offset (CBO) barrier involving large recombination losses. The In doping boosts the donor concentration and crystallinity of the buffer layer, thereby improving the electron transport and extraction processes. Consequently, the CdS:In device achieves the highest efficiency of 14.5% with the Voc,deficit decreasing from 348 mV to 287 mV and the FF increasing from 66.6% to 70.3%, promising a significant efficiency leap for CZTSSe solar cells.\",\"PeriodicalId\":16,\"journal\":{\"name\":\"ACS Energy Letters \",\"volume\":null,\"pages\":null},\"PeriodicalIF\":19.3000,\"publicationDate\":\"2024-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Energy Letters \",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsenergylett.4c02118\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Energy Letters ","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsenergylett.4c02118","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

由于 CdS/Cu2ZnSn(S,Se)4（CZTSSe）界面的非辐射性重组，开路电压（Voc）和填充因子（FF）较低，这是 Kesterite 太阳能电池长期面临的挑战。在这里，我们展示了低温退火和在缓冲层中掺杂 In 的简便组合，从而建立了一个电性良好的高质量 CdS:In/CZTSSe 异质结。低温退火有利于铜、锌和锡杂质元素从缓冲层迁移到吸收侧，从而改善了晶格匹配，减少了有害缺陷和涉及大量重组损耗的导带偏移（CBO）势垒。铟的掺杂提高了缓冲层的供体浓度和结晶度，从而改善了电子传输和萃取过程。因此，CdS:In 器件的效率最高，达到 14.5%，Voc,deficit 从 348 mV 下降到 287 mV，FF 从 66.6% 上升到 70.3%，有望实现 CZTSSe 太阳能电池效率的显著飞跃。

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Low-Temperature Annealing of CdS:In/Cu2ZnSn(S,Se)4 Heterojunction Boosting 14.5% Efficiency Kesterite Solar Cells

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Low-Temperature Annealing of CdS:In/Cu2ZnSn(S,Se)4 Heterojunction Boosting 14.5% Efficiency Kesterite Solar Cells

The persistent challenge in kesterite solar cells is the low open-circuit voltage (V_oc) and fill factor (FF) due to nonradiative recombination at the CdS/Cu₂ZnSn(S,Se)₄ (CZTSSe) interface. Here we demonstrate a convenient combination of low-temperature annealing and In doping within the buffer layer to establish an electrically benign high-quality CdS:In/CZTSSe heterojunction. The low-temperature annealing facilitates the migration of Cu, Zn, and Sn impurity elements from the buffer layer to the absorber side, improving lattice match and reducing detrimental defects and the conduction band offset (CBO) barrier involving large recombination losses. The In doping boosts the donor concentration and crystallinity of the buffer layer, thereby improving the electron transport and extraction processes. Consequently, the CdS:In device achieves the highest efficiency of 14.5% with the V_oc,deficit decreasing from 348 mV to 287 mV and the FF increasing from 66.6% to 70.3%, promising a significant efficiency leap for CZTSSe solar cells.

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来源期刊

ACS Energy Letters Energy-Renewable Energy, Sustainability and the Environment

CiteScore

31.20

自引率

5.00%

发文量

469

审稿时长

1 months

期刊介绍： ACS Energy Letters is a monthly journal that publishes papers reporting new scientific advances in energy research. The journal focuses on topics that are of interest to scientists working in the fundamental and applied sciences. Rapid publication is a central criterion for acceptance, and the journal is known for its quick publication times, with an average of 4-6 weeks from submission to web publication in As Soon As Publishable format. ACS Energy Letters is ranked as the number one journal in the Web of Science Electrochemistry category. It also ranks within the top 10 journals for Physical Chemistry, Energy & Fuels, and Nanoscience & Nanotechnology. The journal offers several types of articles, including Letters, Energy Express, Perspectives, Reviews, Editorials, Viewpoints and Energy Focus. Additionally, authors have the option to submit videos that summarize or support the information presented in a Perspective or Review article, which can be highlighted on the journal's website. ACS Energy Letters is abstracted and indexed in Chemical Abstracts Service/SciFinder, EBSCO-summon, PubMed, Web of Science, Scopus and Portico.