Okhyeon Kim , Yewon Kim , Hye-Lee Kim , Zhe Wu , Chang Yup Park , Dong-Ho Ahn , Bong Jin Kuh , Won-Jun Lee
{"title":"通过原子层沉积 GeTe 和 SbTe 超级循环生长 Ge2Sb2Te5 薄膜的机理","authors":"Okhyeon Kim , Yewon Kim , Hye-Lee Kim , Zhe Wu , Chang Yup Park , Dong-Ho Ahn , Bong Jin Kuh , Won-Jun Lee","doi":"10.1016/j.surfin.2024.105101","DOIUrl":null,"url":null,"abstract":"<div><p>The film with a composition close to Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> was fabricated by the supercycle atomic layer deposition (ALD) of GeTe and SbTe, followed by tellurization annealing. Supercycle processes are widely used for thin film deposition of multicomponent materials and often exhibit non-ideal growth behavior. Since only <em>in situ</em> analysis can reveal the substrate-dependent growth behavior, we used <em>in situ</em> quartz crystal microbalance (QCM) to study the growth mechanism during ALD supercycle processes at 85 °C. GeTe grown on SbTe was more Te-deficient than continuously grown GeTe film. As a result, more Te-deficient Ge-Sb-Te films were formed than expected. By annealing in a Te ambient at 250 °C, the Te-deficient Ge-Sb-Te film was converted to the Ge<sub>0.23</sub>Sb<sub>0.23</sub>Te<sub>0.54</sub> close to Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> film, which had a high density equivalent to 95 % of the FCC structure of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>. The film showed excellent conformality and uniform composition in a trench pattern, suggesting a uniform crystallization temperature of 118 °C at all locations.</p></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"53 ","pages":"Article 105101"},"PeriodicalIF":5.7000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth mechanism of Ge2Sb2Te5 thin films by atomic layer deposition supercycles of GeTe and SbTe\",\"authors\":\"Okhyeon Kim , Yewon Kim , Hye-Lee Kim , Zhe Wu , Chang Yup Park , Dong-Ho Ahn , Bong Jin Kuh , Won-Jun Lee\",\"doi\":\"10.1016/j.surfin.2024.105101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The film with a composition close to Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> was fabricated by the supercycle atomic layer deposition (ALD) of GeTe and SbTe, followed by tellurization annealing. Supercycle processes are widely used for thin film deposition of multicomponent materials and often exhibit non-ideal growth behavior. Since only <em>in situ</em> analysis can reveal the substrate-dependent growth behavior, we used <em>in situ</em> quartz crystal microbalance (QCM) to study the growth mechanism during ALD supercycle processes at 85 °C. GeTe grown on SbTe was more Te-deficient than continuously grown GeTe film. As a result, more Te-deficient Ge-Sb-Te films were formed than expected. By annealing in a Te ambient at 250 °C, the Te-deficient Ge-Sb-Te film was converted to the Ge<sub>0.23</sub>Sb<sub>0.23</sub>Te<sub>0.54</sub> close to Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> film, which had a high density equivalent to 95 % of the FCC structure of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>. The film showed excellent conformality and uniform composition in a trench pattern, suggesting a uniform crystallization temperature of 118 °C at all locations.</p></div>\",\"PeriodicalId\":22081,\"journal\":{\"name\":\"Surfaces and Interfaces\",\"volume\":\"53 \",\"pages\":\"Article 105101\"},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2024-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surfaces and Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2468023024012574\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surfaces and Interfaces","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468023024012574","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Growth mechanism of Ge2Sb2Te5 thin films by atomic layer deposition supercycles of GeTe and SbTe
The film with a composition close to Ge2Sb2Te5 was fabricated by the supercycle atomic layer deposition (ALD) of GeTe and SbTe, followed by tellurization annealing. Supercycle processes are widely used for thin film deposition of multicomponent materials and often exhibit non-ideal growth behavior. Since only in situ analysis can reveal the substrate-dependent growth behavior, we used in situ quartz crystal microbalance (QCM) to study the growth mechanism during ALD supercycle processes at 85 °C. GeTe grown on SbTe was more Te-deficient than continuously grown GeTe film. As a result, more Te-deficient Ge-Sb-Te films were formed than expected. By annealing in a Te ambient at 250 °C, the Te-deficient Ge-Sb-Te film was converted to the Ge0.23Sb0.23Te0.54 close to Ge2Sb2Te5 film, which had a high density equivalent to 95 % of the FCC structure of Ge2Sb2Te5. The film showed excellent conformality and uniform composition in a trench pattern, suggesting a uniform crystallization temperature of 118 °C at all locations.
期刊介绍:
The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results.
Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)