{"title":"促进 AZO 多层薄膜光电性能的定制空气退火策略","authors":"Shan Gao, Lin Li, Yunqing Tang* and Ping Yang*, ","doi":"10.1021/acs.cgd.4c0033910.1021/acs.cgd.4c00339","DOIUrl":null,"url":null,"abstract":"<p >We investigated the effects of air annealing on the photoelectric performance of aluminum-doped zinc oxide (AZO)/Al<sub>2</sub>O<sub>3</sub>/Ag/AZO. Transparent conductive films (TCFs) of AZO (55 nm)/Al<sub>2</sub>O<sub>3</sub> (1.5 nm)/Ag (10 nm)/AZO (55 nm) were deposited on glass substrates via RF/DC magnetron sputtering at room temperature. The Al<sub>2</sub>O<sub>3</sub> seed layer was proved to promote Ag wetting in the multilayers structure. The result shows that the optimum annealing condition for the multilayer film was determined as annealing for 30 min at 300 °C. The smooth surface obtained effectively reduced the light absorption and scattering, and the Ag layer with continuous growth and a high degree of crystallization contributed to the conductivity. The films exhibited a sheet resistance of 5.80 Ω/sq, an average transmittance of 93.43% in the 400–800 nm range, and a figure of merit (FOM) that was enhanced by 26.9% to 87.3 × 10<sup>–3</sup> Ω<sup>–1</sup> via air annealing. Remarkably, this is the highest FOM reported for analogous TCFs with an AZO/Ag/AZO configuration. The TCFs of this structure prepared by our method have potential applications in photovoltaic devices.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":"24 18","pages":"7415–7423 7415–7423"},"PeriodicalIF":3.2000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tailored Air Annealing Strategy to Promote the Photoelectric Performance of AZO-Based Multilayer Films\",\"authors\":\"Shan Gao, Lin Li, Yunqing Tang* and Ping Yang*, \",\"doi\":\"10.1021/acs.cgd.4c0033910.1021/acs.cgd.4c00339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >We investigated the effects of air annealing on the photoelectric performance of aluminum-doped zinc oxide (AZO)/Al<sub>2</sub>O<sub>3</sub>/Ag/AZO. Transparent conductive films (TCFs) of AZO (55 nm)/Al<sub>2</sub>O<sub>3</sub> (1.5 nm)/Ag (10 nm)/AZO (55 nm) were deposited on glass substrates via RF/DC magnetron sputtering at room temperature. The Al<sub>2</sub>O<sub>3</sub> seed layer was proved to promote Ag wetting in the multilayers structure. The result shows that the optimum annealing condition for the multilayer film was determined as annealing for 30 min at 300 °C. The smooth surface obtained effectively reduced the light absorption and scattering, and the Ag layer with continuous growth and a high degree of crystallization contributed to the conductivity. The films exhibited a sheet resistance of 5.80 Ω/sq, an average transmittance of 93.43% in the 400–800 nm range, and a figure of merit (FOM) that was enhanced by 26.9% to 87.3 × 10<sup>–3</sup> Ω<sup>–1</sup> via air annealing. Remarkably, this is the highest FOM reported for analogous TCFs with an AZO/Ag/AZO configuration. The TCFs of this structure prepared by our method have potential applications in photovoltaic devices.</p>\",\"PeriodicalId\":34,\"journal\":{\"name\":\"Crystal Growth & Design\",\"volume\":\"24 18\",\"pages\":\"7415–7423 7415–7423\"},\"PeriodicalIF\":3.2000,\"publicationDate\":\"2024-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystal Growth & Design\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.cgd.4c00339\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Growth & Design","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.cgd.4c00339","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Tailored Air Annealing Strategy to Promote the Photoelectric Performance of AZO-Based Multilayer Films
We investigated the effects of air annealing on the photoelectric performance of aluminum-doped zinc oxide (AZO)/Al2O3/Ag/AZO. Transparent conductive films (TCFs) of AZO (55 nm)/Al2O3 (1.5 nm)/Ag (10 nm)/AZO (55 nm) were deposited on glass substrates via RF/DC magnetron sputtering at room temperature. The Al2O3 seed layer was proved to promote Ag wetting in the multilayers structure. The result shows that the optimum annealing condition for the multilayer film was determined as annealing for 30 min at 300 °C. The smooth surface obtained effectively reduced the light absorption and scattering, and the Ag layer with continuous growth and a high degree of crystallization contributed to the conductivity. The films exhibited a sheet resistance of 5.80 Ω/sq, an average transmittance of 93.43% in the 400–800 nm range, and a figure of merit (FOM) that was enhanced by 26.9% to 87.3 × 10–3 Ω–1 via air annealing. Remarkably, this is the highest FOM reported for analogous TCFs with an AZO/Ag/AZO configuration. The TCFs of this structure prepared by our method have potential applications in photovoltaic devices.
期刊介绍:
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.