高铝含量 AlGaN/GaN HEMT 中的铝剖面对 2DEG 性能的影响

IF 3.5 2区 物理与天体物理 Q2 PHYSICS, APPLIED
A. Papamichail, A. R. Persson, S. Richter, V. Stanishev, N. Armakavicius, P. Kühne, S. Guo, P. O. Å. Persson, P. P. Paskov, N. Rorsman, V. Darakchieva
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引用次数: 0

摘要

超薄高铝含量阻挡层可以改善 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的栅极控制和高频率运行,但精确的成分控制却非常具有挑战性。在这项工作中,我们研究了AlxGa1-xN/GaN HEMT 结构的成分剖面,其阻挡层中的铝含量目标为 x = 0.50、0.70 和 1,厚度在 10 纳米以下范围,并与二维电子气(2DEG)特性相关。HEMT 结构是在碳化硅上通过金属有机化学气相沉积法生长的。通过扫描透射电子显微镜结合能量色散 X 射线光谱实验确定了阻挡层中的最大铝含量,发现该含量低于预期值,而且随着 x 值的增加,与设计结构的偏差也逐渐增大。预期 x ∼ 0.50 时,GaN 与 Al0.46Ga0.54N 之间的成分界面非常清晰,铝的轮廓呈盒状;而预期 x 为 0.70 和 1 的样品中,铝的分级非常明显,预期 AlN 阻挡层的 HEMT 结构中铝含量最高,达到 0.78。通过非接触测量和电霍尔效应测量,并结合泊松-薛定谔方程的自洽解法,评估和讨论了实验确定的铝分布对 2DEG 性能的影响。结果表明,所观察到的与预期铝剖面的偏差会对二维电子元件的约束产生负面影响,并导致迁移率参数降低,这对在高频器件中实现高铝含量的 AlGaN/GaN 结构具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
Ultra-thin high-Al content barrier layers can enable improved gate control and high-frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the precise composition control is very challenging. In this work, we investigate the compositional profiles of AlxGa1−xN/GaN HEMT structures with targeted Al content in the barrier layer, x = 0.50, 0.70, and 1, and thickness in the sub-10 nm range in correlation with the two-dimensional electron gas (2DEG) properties. The HEMT structures are grown by metal-organic chemical vapor deposition on SiC. The maximum Al content in the barrier layer, experimentally determined by scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, is found to be lower than that intended and the deviations from the designed structures increase progressively with increasing x. Compositionally sharp interface between GaN and Al0.46Ga0.54N and box-like Al profile is achieved for intended x∼0.50 while pronounced Al grading is found in the samples with intended x of 0.70 and 1, with a maximum Al content of 0.78 reached for the HEMT structure with intended AlN barrier layer. The impact of the experimentally determined Al profiles on the 2DEG properties, obtained by contactless and electrical Hall effect measurements and coupled with self-consistent solution of the Poisson–Schrödinger equation, is evaluated and discussed. It is shown that the observed deviations from the intended Al profiles have a negative effect on the 2DEG confinement and result in reduced mobility parameters, which have significant implications for the implementation of high-Al content AlGaN/GaN structures in high-frequency devices.
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来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
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