Mingyang Gu , Lin Tao , Davoud Dastan , Jie Dang , Xueyuan Zhang , Lixiang Li , Baigang An
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In addition, the adsorption energy and distance disclosed the gas-solid interface structure of multiple gases on the Ir/Pd/Pt/Rh-C<sub>2</sub>N<sub>1</sub> monolayer. Importantly, C<sub>2</sub>H<sub>2</sub> exhibits strong responses to p-type semiconductor Pt-C<sub>2</sub>N<sub>1</sub> and n-type semiconductor Ir-C<sub>2</sub>N<sub>1</sub>, respectively. Crystal Orbital Hamilton Population reveals the difference in adsorption energy due to modifications involving four precious metals. Interestingly, for the first time, the density of states calculation reveals that under the coexistence of multiple gases, the Pt/Ir-C<sub>2</sub>N<sub>1</sub> monolayer effectively eliminates the interference of other gases and has a unique response only to C<sub>2</sub>H<sub>2</sub>. In real situations, with the basis of Gibbs free energy and Einstein's law of diffusion, it was determined that Pt-C<sub>2</sub>N<sub>1</sub> and Ir-C<sub>2</sub>N<sub>1</sub> showed excellent hydrophobicity, a wider temperature range, and a low diffusion activation energy barrier. 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引用次数: 0
摘要
本研究利用密度泛函理论,选择了由 Ir、Pd、Pt 和 Rh 原子修饰的 C3N1 单层(Ir/Pd/Pt/Rh-C2N1)来选择性地吸附多种气体(H2O、C2H2 和 C4H10O2)中的 C2H2。根据内聚能和 ab initio 分子动力学模拟的结果,贵金属原子可以稳定地锚定在单层上,同时提高了材料的导电性。此外,吸附能和吸附距离揭示了 Ir/Pd/Pt/Rh-C2N1 单层上多种气体的气固界面结构。重要的是,C2H2 对 p 型半导体 Pt-C2N1 和 n 型半导体 Ir-C2N1 分别表现出强烈的反应。晶体轨道汉密尔顿波普揭示了涉及四种贵金属的改性导致的吸附能量差异。有趣的是,状态密度计算首次揭示了在多种气体共存的情况下,Pt/Ir-C2N1 单层能有效消除其他气体的干扰,只对 C2H2 有独特的响应。在实际情况下,以吉布斯自由能和爱因斯坦扩散定律为基础,确定了 Pt-C2N1 和 Ir-C2N1 表现出优异的疏水性、较宽的温度范围和较低的扩散活化能势垒。总之,Pt-C2N1 和 Ir-C2N1 可以不受干扰地检测 C2H2,保持基本原理、响应性、稳定性和多功能性,不受外部因素的影响。
Metal-enhanced carbon-nitrogen material for selective detection of hazardous gases: Insights from interface electronic states
In this study, utilizing density functional theory, the C3N1 monolayer modified by Ir, Pd, Pt, and Rh atoms (Ir/Pd/Pt/Rh-C2N1) was chosen for selective adsorption of C2H2 amidst multiple gases (H2O, C2H2, and C4H10O2). According to the results of cohesive energy and ab initio molecular dynamics simulations, it is indicated that precious metal atoms can be stably anchored on the monolayer while enhancing the conductivity of the material The analysis of the electrostatic potential and work function determined the highly active sites and electron release capacity. In addition, the adsorption energy and distance disclosed the gas-solid interface structure of multiple gases on the Ir/Pd/Pt/Rh-C2N1 monolayer. Importantly, C2H2 exhibits strong responses to p-type semiconductor Pt-C2N1 and n-type semiconductor Ir-C2N1, respectively. Crystal Orbital Hamilton Population reveals the difference in adsorption energy due to modifications involving four precious metals. Interestingly, for the first time, the density of states calculation reveals that under the coexistence of multiple gases, the Pt/Ir-C2N1 monolayer effectively eliminates the interference of other gases and has a unique response only to C2H2. In real situations, with the basis of Gibbs free energy and Einstein's law of diffusion, it was determined that Pt-C2N1 and Ir-C2N1 showed excellent hydrophobicity, a wider temperature range, and a low diffusion activation energy barrier. In summary, Pt-C2N1 and Ir-C2N1 detect C2H2 without interference, maintaining fundamental principles, responsiveness, stability, and versatility unaffected by external factors.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.