{"title":"用于模拟突触的开源浮栅单元","authors":"Matthew Chen, Charana Sonnadara, Sahil Shah","doi":"10.1049/ell2.70036","DOIUrl":null,"url":null,"abstract":"<p>The floating-gate transistor is commonly employed as a non-volatile memory device, leveraging a floating node at its gate to store electrical charge over extended periods. This stored charge effectively alters the threshold voltage of the transistor. Utilizing standard CMOS technologies, floating-gate transistors can be designed and fabricated using conventional CMOS processes. This study focuses on characterizing the performance of a PMOS-based floating-gate transistor, specifically fabricated using the open-source Skywater 130 nm process. The modulation of charge on the floating node is explored through both hot-electron injection and Fowler–Nordheim tunnelling, providing insight into the resolution of these programming mechanisms. Additionally, the study includes a preliminary analysis of the retention time of the programmed charge in these devices. This work contributes to the open-source electronics community by detailing the design and programming techniques of floating-gate transistors developed with an open-source process design kit, and makes the corresponding FG cell designs available for public use.</p>","PeriodicalId":11556,"journal":{"name":"Electronics Letters","volume":null,"pages":null},"PeriodicalIF":0.7000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70036","citationCount":"0","resultStr":"{\"title\":\"Open-source floating-gate cell for analogue synapses\",\"authors\":\"Matthew Chen, Charana Sonnadara, Sahil Shah\",\"doi\":\"10.1049/ell2.70036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The floating-gate transistor is commonly employed as a non-volatile memory device, leveraging a floating node at its gate to store electrical charge over extended periods. This stored charge effectively alters the threshold voltage of the transistor. Utilizing standard CMOS technologies, floating-gate transistors can be designed and fabricated using conventional CMOS processes. This study focuses on characterizing the performance of a PMOS-based floating-gate transistor, specifically fabricated using the open-source Skywater 130 nm process. The modulation of charge on the floating node is explored through both hot-electron injection and Fowler–Nordheim tunnelling, providing insight into the resolution of these programming mechanisms. Additionally, the study includes a preliminary analysis of the retention time of the programmed charge in these devices. This work contributes to the open-source electronics community by detailing the design and programming techniques of floating-gate transistors developed with an open-source process design kit, and makes the corresponding FG cell designs available for public use.</p>\",\"PeriodicalId\":11556,\"journal\":{\"name\":\"Electronics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2024-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70036\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronics Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1049/ell2.70036\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/ell2.70036","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Open-source floating-gate cell for analogue synapses
The floating-gate transistor is commonly employed as a non-volatile memory device, leveraging a floating node at its gate to store electrical charge over extended periods. This stored charge effectively alters the threshold voltage of the transistor. Utilizing standard CMOS technologies, floating-gate transistors can be designed and fabricated using conventional CMOS processes. This study focuses on characterizing the performance of a PMOS-based floating-gate transistor, specifically fabricated using the open-source Skywater 130 nm process. The modulation of charge on the floating node is explored through both hot-electron injection and Fowler–Nordheim tunnelling, providing insight into the resolution of these programming mechanisms. Additionally, the study includes a preliminary analysis of the retention time of the programmed charge in these devices. This work contributes to the open-source electronics community by detailing the design and programming techniques of floating-gate transistors developed with an open-source process design kit, and makes the corresponding FG cell designs available for public use.
期刊介绍:
Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews.
Scope
As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below.
Antennas and Propagation
Biomedical and Bioinspired Technologies, Signal Processing and Applications
Control Engineering
Electromagnetism: Theory, Materials and Devices
Electronic Circuits and Systems
Image, Video and Vision Processing and Applications
Information, Computing and Communications
Instrumentation and Measurement
Microwave Technology
Optical Communications
Photonics and Opto-Electronics
Power Electronics, Energy and Sustainability
Radar, Sonar and Navigation
Semiconductor Technology
Signal Processing
MIMO