Z-shaped gate tunnel FET with graphene channel: An extensive investigation of its analog and linearity performance

This work analyzes a graphene channel Z-shaped gate tunnel FET's (ZTFET) analog, and linearity performance. This research aims to introduce graphene with a two-dimensional honeycomb structure that is anticipated to be a strong challenger for the upcoming generation of semiconductor devices. The ZTFET with graphene channel provides a 3-decade increase in ON current, indicating a notable improvement in gate capacitance and transconductance compared to the conventional silicon channel. This improvement further leads to better linearity and analog/RF performance. We delved into various linearity and Radio Frequency (RF) figure-of-merits, including g_mn, VIP₂, VIP₃, IIP₃, 1‐dB compression point, GBWP, TFP, unity gain cut‐off frequency, and maximum oscillation frequency. The results of the new GC-ZTFET are compared with those of the traditional ZTFET to establish its superiority. The GC-ZTFET outshines other device structures when speaking of linearity, RF performance, and current-carrying capability.