探索碗状碳化硅纳米团簇对 G 系列神经毒剂的敏感性:密度泛函理论方法

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2024-08-19 DOI:10.1007/s12633-024-03097-3
Naveen Kosar, Arooj Fatima, Abdulrahman Allangawi, Khurshid Ayub, Muhammad Imran, Tariq Mahmood
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引用次数: 0

摘要

在各类神经毒剂中,G 系列神经毒剂更具杀伤力和毒性。为了寻找更好的表面来监测和清除 G 系列神经毒剂(塔崩、沙林、索曼和环沙林),我们探索了碗形碳化硅(b-SiC)的灵敏度和选择性。采用密度泛函理论(DFT)的 ωB97XD/6-31 + G(d,p) 方法评估了碳化硅特性的传感器能力。相互作用能揭示了所有复合物的热力学稳定性,发现 Soman@b-SiC 是最稳定的复合物,其相互作用能最高,为 -34.29 kcal/mole。自然键轨道(NBO)电荷分析表明了络合过程中的电荷转移。所有复合物的前沿分子轨道能隙(EH-L)都发生了显著变化。非共价相互作用(NCI)分析证实了神经毒剂与 b-SiC 之间存在非共价相互作用。通过电子密度差(EDD)验证了神经毒剂的电荷转移。研究的总体结果证实,碗形碳化硅可作为 G 系列神经毒剂的更好传感器,并可有效用作下一代传感材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploring the Sensitivity of Bowl-shaped Silicon Carbide Nanocluster towards G-Series Nerve Agents: A Density Functional Theory Approach

G-series nerve agents are more lethal and noxious among all classes of nerve agents. In search of better surface for the monitoring and removal of G-series nerve agents (Tabun, Sarin, Soman and Cyclosarin), the sensitivity and selectivity of bowl-shaped silicon carbide (b-SiC) is explored. The sensor ability of Silicon Carbide properties is evaluated at ωB97XD/6–31 + G(d,p) method of density functional theory (DFT). Interaction energy revealed the thermodynamic stability of all complexes and the Soman@b-SiC is found the most stable complex with the highest interaction energy of -34.29 kcal/mole. The natural bond orbital (NBO) charge analysis showed the charge transfer during complexation. A noteworthy change in frontier molecular orbitals energy gap (EH-L) is observed for all complexes. Noncovalent interaction (NCI) analysis confirmed the presence of noncovalent interactions between the nerve agents and b-SiC. NBO charge transfer is validated through electronic density differences (EDD). The overall results of the study confirmed that bowl-shaped silicon carbide can act as a better sensor for G-series nerve agent and can be effective in using as next generation sensing material.

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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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