{"title":"碳化硅结构的面指数:另一种方法","authors":"Shriya Negi, Vijay Kumar Bhat","doi":"10.1007/s12633-024-03119-0","DOIUrl":null,"url":null,"abstract":"<div><p>Face index is a critical topological descriptor that provides important information about the structural variations of various materials. Initially introduced as a novel metric, the face index has become essential in characterizing the complexity and properties of molecular structures like silicate networks, carbon sheets, and nanotubes. This analysis focuses on the face index within the Silicon Carbide structure, highlighting its profound significance as a pivotal structural descriptor. By shedding light on its implications for the fundamental properties of three different Silicon Carbide structures: <span>\\(Si_2C_3\\)</span>-<i>I</i>[<i>m</i>, <i>n</i>], <span>\\(Si_2C_3\\)</span>-<i>II</i>[<i>m</i>, <i>n</i>] and <span>\\(Si_2C_3\\)</span>-<i>III</i>[<i>m</i>, <i>n</i>], this study aims to advance our understanding of the structural complexities and potential applications of this unique material system.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5865 - 5876"},"PeriodicalIF":2.8000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Face Index of Silicon Carbide Structures: An Alternative Approach\",\"authors\":\"Shriya Negi, Vijay Kumar Bhat\",\"doi\":\"10.1007/s12633-024-03119-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Face index is a critical topological descriptor that provides important information about the structural variations of various materials. Initially introduced as a novel metric, the face index has become essential in characterizing the complexity and properties of molecular structures like silicate networks, carbon sheets, and nanotubes. This analysis focuses on the face index within the Silicon Carbide structure, highlighting its profound significance as a pivotal structural descriptor. By shedding light on its implications for the fundamental properties of three different Silicon Carbide structures: <span>\\\\(Si_2C_3\\\\)</span>-<i>I</i>[<i>m</i>, <i>n</i>], <span>\\\\(Si_2C_3\\\\)</span>-<i>II</i>[<i>m</i>, <i>n</i>] and <span>\\\\(Si_2C_3\\\\)</span>-<i>III</i>[<i>m</i>, <i>n</i>], this study aims to advance our understanding of the structural complexities and potential applications of this unique material system.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"16 16\",\"pages\":\"5865 - 5876\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03119-0\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03119-0","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Face Index of Silicon Carbide Structures: An Alternative Approach
Face index is a critical topological descriptor that provides important information about the structural variations of various materials. Initially introduced as a novel metric, the face index has become essential in characterizing the complexity and properties of molecular structures like silicate networks, carbon sheets, and nanotubes. This analysis focuses on the face index within the Silicon Carbide structure, highlighting its profound significance as a pivotal structural descriptor. By shedding light on its implications for the fundamental properties of three different Silicon Carbide structures: \(Si_2C_3\)-I[m, n], \(Si_2C_3\)-II[m, n] and \(Si_2C_3\)-III[m, n], this study aims to advance our understanding of the structural complexities and potential applications of this unique material system.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.