双盘和化学辅助磁流变光饰工艺的实验研究

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2024-09-05 DOI:10.1007/s12633-024-03128-z
Mayank Srivastava, Kheelraj Pandey, Pulak M. Pandey, Ashwani Sharma
{"title":"双盘和化学辅助磁流变光饰工艺的实验研究","authors":"Mayank Srivastava,&nbsp;Kheelraj Pandey,&nbsp;Pulak M. Pandey,&nbsp;Ashwani Sharma","doi":"10.1007/s12633-024-03128-z","DOIUrl":null,"url":null,"abstract":"<div><p>A new hybrid finishing process, namely, double-disc chemical-assisted magnetorheological finishing (DDCAMRF) process has been developed for the polishing of monocrystalline silicon wafers combining the benefits of the two processes namely, chemical–mechanical polishing (CMP) and magneto-rheological finishing (MRF). In the present work, the bonding between the Si atoms gets weakened by the chemical action which further softens the work surface while the rotation of MR fluid provides the desired mechanical force which assists in the removal of material from the work surface. An experimental setup for the hybrid finishing has been designed and fabricated for achieving the nanometric finishing of silicon substrates. Also, the process was further established by carrying out the experimental study which involves analyzing the influence of different process factors viz., polishing speed, % CIP concentration, slurry flow rate, and working gap, on the surface roughness (R<sub>a</sub>) of a monocrystalline silicon wafer. An improvement of over 88.96% was observed in the surface roughness of a silicon wafer and a nearly mirror-like finish was observed while carrying out the polishing with the developed DDCAMRF process. The developed process resulted in enhancing the process performance ensuring better surface finish (i.e., with minimal defects) and reduced polishing time compared to different polishing techniques available.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5977 - 5990"},"PeriodicalIF":2.8000,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental Investigation into Double-disc and Chemically Assisted Magnetorheological Finishing Process\",\"authors\":\"Mayank Srivastava,&nbsp;Kheelraj Pandey,&nbsp;Pulak M. Pandey,&nbsp;Ashwani Sharma\",\"doi\":\"10.1007/s12633-024-03128-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A new hybrid finishing process, namely, double-disc chemical-assisted magnetorheological finishing (DDCAMRF) process has been developed for the polishing of monocrystalline silicon wafers combining the benefits of the two processes namely, chemical–mechanical polishing (CMP) and magneto-rheological finishing (MRF). In the present work, the bonding between the Si atoms gets weakened by the chemical action which further softens the work surface while the rotation of MR fluid provides the desired mechanical force which assists in the removal of material from the work surface. An experimental setup for the hybrid finishing has been designed and fabricated for achieving the nanometric finishing of silicon substrates. Also, the process was further established by carrying out the experimental study which involves analyzing the influence of different process factors viz., polishing speed, % CIP concentration, slurry flow rate, and working gap, on the surface roughness (R<sub>a</sub>) of a monocrystalline silicon wafer. An improvement of over 88.96% was observed in the surface roughness of a silicon wafer and a nearly mirror-like finish was observed while carrying out the polishing with the developed DDCAMRF process. The developed process resulted in enhancing the process performance ensuring better surface finish (i.e., with minimal defects) and reduced polishing time compared to different polishing techniques available.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"16 16\",\"pages\":\"5977 - 5990\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03128-z\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03128-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

一种新的混合抛光工艺,即双盘化学辅助磁流变抛光(DDCAMRF)工艺,已被开发用于单晶硅片的抛光,该工艺结合了化学机械抛光(CMP)和磁流变抛光(MRF)两种工艺的优点。在目前的工作中,硅原子间的结合力因化学作用而减弱,从而进一步软化了工作表面,而磁流变液体的旋转则提供了所需的机械力,有助于从工作表面去除材料。为了实现硅基底的纳米精加工,我们设计并制造了一套混合精加工实验装置。此外,还通过实验研究进一步确定了该工艺,包括分析不同工艺因素(即抛光速度、CIP 浓度百分比、浆料流速和工作间隙)对单晶硅晶片表面粗糙度(Ra)的影响。在使用所开发的 DDCAMRF 工艺进行抛光时,硅晶片的表面粗糙度提高了 88.96%以上,并获得了近乎镜面的光洁度。与现有的各种抛光技术相比,所开发的工艺提高了工艺性能,确保了更好的表面光洁度(即缺陷最小),并缩短了抛光时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental Investigation into Double-disc and Chemically Assisted Magnetorheological Finishing Process

A new hybrid finishing process, namely, double-disc chemical-assisted magnetorheological finishing (DDCAMRF) process has been developed for the polishing of monocrystalline silicon wafers combining the benefits of the two processes namely, chemical–mechanical polishing (CMP) and magneto-rheological finishing (MRF). In the present work, the bonding between the Si atoms gets weakened by the chemical action which further softens the work surface while the rotation of MR fluid provides the desired mechanical force which assists in the removal of material from the work surface. An experimental setup for the hybrid finishing has been designed and fabricated for achieving the nanometric finishing of silicon substrates. Also, the process was further established by carrying out the experimental study which involves analyzing the influence of different process factors viz., polishing speed, % CIP concentration, slurry flow rate, and working gap, on the surface roughness (Ra) of a monocrystalline silicon wafer. An improvement of over 88.96% was observed in the surface roughness of a silicon wafer and a nearly mirror-like finish was observed while carrying out the polishing with the developed DDCAMRF process. The developed process resulted in enhancing the process performance ensuring better surface finish (i.e., with minimal defects) and reduced polishing time compared to different polishing techniques available.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信