L. M. El-Khalawany, S. A. Gad, A. M. Moustafa, A. Nassar, E. M. El-Menyawy
{"title":"薄膜厚度对三(8-羟基喹啉)铁薄膜电阻率和光学功能分布的影响","authors":"L. M. El-Khalawany, S. A. Gad, A. M. Moustafa, A. Nassar, E. M. El-Menyawy","doi":"10.1149/2162-8777/ad6fd1","DOIUrl":null,"url":null,"abstract":"Iron tris(8-hydroxyquinoline) (Feq<sub>3</sub>) was synthesized and investigated by X-ray photoemission spectroscopy. It crystalizes in triclinic polycrystalline structure in powder form, whereas the Feq<sub>3</sub> films, with different thickness values (12, 20, 35, and 42 nm), have an amorphous structure. The influence of film thickness on the electrical resistivity and the optical properties is reported. The morphology of Feq<sub>3</sub> was investigated in terms of field-emission scanning electron microscope. Electrical resistivity measurements indicate an inverse proportionality to the film thickness. The optical properties of Feq<sub>3</sub> films were investigated in terms of photoluminescence spectra and spectrophotometric measurements of transmittance and reflectance. The optical functions such as absorption coefficient and refractive index of the films were calculated. The dependence of the Feq<sub>3</sub> film thickness on the optical energy band gap and dispersion parameters was studied. The outcomes indicate that the Feq<sub>3</sub> films are of great importance for applications in organic solar cells and light emitting diodes.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"10 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Film Thickness on the Electrical Resistivity and Optical Functions Distribution of Iron Tris(8-hydroxyquinoline) Thin Films\",\"authors\":\"L. M. El-Khalawany, S. A. Gad, A. M. Moustafa, A. Nassar, E. M. El-Menyawy\",\"doi\":\"10.1149/2162-8777/ad6fd1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Iron tris(8-hydroxyquinoline) (Feq<sub>3</sub>) was synthesized and investigated by X-ray photoemission spectroscopy. It crystalizes in triclinic polycrystalline structure in powder form, whereas the Feq<sub>3</sub> films, with different thickness values (12, 20, 35, and 42 nm), have an amorphous structure. The influence of film thickness on the electrical resistivity and the optical properties is reported. The morphology of Feq<sub>3</sub> was investigated in terms of field-emission scanning electron microscope. Electrical resistivity measurements indicate an inverse proportionality to the film thickness. The optical properties of Feq<sub>3</sub> films were investigated in terms of photoluminescence spectra and spectrophotometric measurements of transmittance and reflectance. The optical functions such as absorption coefficient and refractive index of the films were calculated. The dependence of the Feq<sub>3</sub> film thickness on the optical energy band gap and dispersion parameters was studied. The outcomes indicate that the Feq<sub>3</sub> films are of great importance for applications in organic solar cells and light emitting diodes.\",\"PeriodicalId\":11496,\"journal\":{\"name\":\"ECS Journal of Solid State Science and Technology\",\"volume\":\"10 1\",\"pages\":\"\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-08-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Journal of Solid State Science and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1149/2162-8777/ad6fd1\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad6fd1","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of Film Thickness on the Electrical Resistivity and Optical Functions Distribution of Iron Tris(8-hydroxyquinoline) Thin Films
Iron tris(8-hydroxyquinoline) (Feq3) was synthesized and investigated by X-ray photoemission spectroscopy. It crystalizes in triclinic polycrystalline structure in powder form, whereas the Feq3 films, with different thickness values (12, 20, 35, and 42 nm), have an amorphous structure. The influence of film thickness on the electrical resistivity and the optical properties is reported. The morphology of Feq3 was investigated in terms of field-emission scanning electron microscope. Electrical resistivity measurements indicate an inverse proportionality to the film thickness. The optical properties of Feq3 films were investigated in terms of photoluminescence spectra and spectrophotometric measurements of transmittance and reflectance. The optical functions such as absorption coefficient and refractive index of the films were calculated. The dependence of the Feq3 film thickness on the optical energy band gap and dispersion parameters was studied. The outcomes indicate that the Feq3 films are of great importance for applications in organic solar cells and light emitting diodes.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.