Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton
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引用次数: 0
摘要
研究人员利用低功函数(4.5 eV)钨(W)作为整流触点,在 W/Ga2O3 肖特基整流器和 NiO/Ga2O3 异质结整流器中获得低导通电压。这些器件的相对面积和直径比例各不相同,涵盖了从纯肖特基势垒二极管(SBD)到纯异质结二极管(HJD)的各种配置。纯肖特基整流器 W 触点的开启电压为 0.22 V,纯 HJD 为 1.50 V,而镍/金触点的开启电压分别为 0.66 V 和 1.77 V。纯肖特基和异质结整流器的反向恢复时间为 31.2 至 33.5 ns。带 W 触点的 SBD 的开关能量损失是 HJD 的 20%。SBD 的反向击穿电压从 600 V 到 HJD 的 2400 V 不等。这是报告的 600/1200 V 级 Ga2O3 整流器的最低导通电压值,将这些器件的应用范围扩展到了电动汽车充电应用所需的电压。
Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices were produced with varying proportions of relative areas and diameters, encompassing a spectrum from pure Schottky Barrier Diode (SBD) to pure Heterojunction Diode (HJD) configurations. The turn-on voltages with W contacts ranged from 0.22 V for pure Schottky rectifiers to 1.50 V for pure HJDs, compared to 0.66 and 1.77 V, respectively, for Ni/Au contacts. The reverse recovery times ranged from 31.2 to 33.5 ns for pure Schottky and heterojunction rectifiers. Switching energy losses for the SBD with W contacts were ∼20% of those for HJDs. The reverse breakdown voltages ranged from 600 V for SBDs to 2400 V for HJDs. These are the lowest reported turn-on voltage values for 600/1200 V-class Ga2O3 rectifiers that extend the range of applications of these devices down to the voltages of interest for electric vehicle charging applications.
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