{"title":"源自 CdPS3 单晶带隙外直接载流子跃迁的太阳盲紫外线光电探测器","authors":"Xinyun Zhou, Shuo Liu, Jiacheng Yang, Junda Yang, Fen Zhang, Le Yuan, Ruiying Ma, Jiaqi Shi, Qinglin Xia, Mianzeng Zhong","doi":"10.1007/s12274-024-6941-6","DOIUrl":null,"url":null,"abstract":"<p>Wide-bandgap semiconductors have demonstrated considerable potential for fabricating solar-blind ultraviolet (SBUV) photodetectors, which are extensively used in both civilian and military applications. Despite this promise, the limited variety of semiconductors with suitable bandgaps hampers the advancement of high-performance SBUV detectors. In this study, we synthesized CdPS<sub>3</sub> transparent single crystals using the chemical vapor transport (CVT) method. Density functional theory (DFT) calculations suggest that the bandgap of CdPS<sub>3</sub> decreases as the material’s thickness increases, a finding corroborated by subsequent absorption spectra and photoelectric response measurements. The as-prepared CdPS<sub>3</sub> nanosheets were employed as channels in photodetectors, demonstrating outstanding photoelectric performance in the solar-blind ultraviolet range (at 254 and 275 nm) with high responsivity (0.3 A/W), high specific detectivity (5.5 × 10<sup>9</sup> Jones), rapid response speed (2.6 ms/3.4 ms), and exceptionally low dark current (2 pA). It is noteworthy that these nanosheets exhibit almost no sensitivity to 365 nm and visible light irradiation, attributable to the direct carrier transition beyond the broad bandgap in CdPS<sub>3</sub>. Furthermore, high-quality imaging was achieved under different gate voltages using 275 nm ultraviolet light, underscoring the potential of CdPS<sub>3</sub> as a new material for high-performance SBUV optoelectronic detection.\n</p>","PeriodicalId":713,"journal":{"name":"Nano Research","volume":"38 1","pages":""},"PeriodicalIF":9.5000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Solar-blind ultraviolet photodetector derived from direct carrier transition beyond the bandgap of CdPS3 single crystals\",\"authors\":\"Xinyun Zhou, Shuo Liu, Jiacheng Yang, Junda Yang, Fen Zhang, Le Yuan, Ruiying Ma, Jiaqi Shi, Qinglin Xia, Mianzeng Zhong\",\"doi\":\"10.1007/s12274-024-6941-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Wide-bandgap semiconductors have demonstrated considerable potential for fabricating solar-blind ultraviolet (SBUV) photodetectors, which are extensively used in both civilian and military applications. Despite this promise, the limited variety of semiconductors with suitable bandgaps hampers the advancement of high-performance SBUV detectors. In this study, we synthesized CdPS<sub>3</sub> transparent single crystals using the chemical vapor transport (CVT) method. Density functional theory (DFT) calculations suggest that the bandgap of CdPS<sub>3</sub> decreases as the material’s thickness increases, a finding corroborated by subsequent absorption spectra and photoelectric response measurements. The as-prepared CdPS<sub>3</sub> nanosheets were employed as channels in photodetectors, demonstrating outstanding photoelectric performance in the solar-blind ultraviolet range (at 254 and 275 nm) with high responsivity (0.3 A/W), high specific detectivity (5.5 × 10<sup>9</sup> Jones), rapid response speed (2.6 ms/3.4 ms), and exceptionally low dark current (2 pA). It is noteworthy that these nanosheets exhibit almost no sensitivity to 365 nm and visible light irradiation, attributable to the direct carrier transition beyond the broad bandgap in CdPS<sub>3</sub>. Furthermore, high-quality imaging was achieved under different gate voltages using 275 nm ultraviolet light, underscoring the potential of CdPS<sub>3</sub> as a new material for high-performance SBUV optoelectronic detection.\\n</p>\",\"PeriodicalId\":713,\"journal\":{\"name\":\"Nano Research\",\"volume\":\"38 1\",\"pages\":\"\"},\"PeriodicalIF\":9.5000,\"publicationDate\":\"2024-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s12274-024-6941-6\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s12274-024-6941-6","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Solar-blind ultraviolet photodetector derived from direct carrier transition beyond the bandgap of CdPS3 single crystals
Wide-bandgap semiconductors have demonstrated considerable potential for fabricating solar-blind ultraviolet (SBUV) photodetectors, which are extensively used in both civilian and military applications. Despite this promise, the limited variety of semiconductors with suitable bandgaps hampers the advancement of high-performance SBUV detectors. In this study, we synthesized CdPS3 transparent single crystals using the chemical vapor transport (CVT) method. Density functional theory (DFT) calculations suggest that the bandgap of CdPS3 decreases as the material’s thickness increases, a finding corroborated by subsequent absorption spectra and photoelectric response measurements. The as-prepared CdPS3 nanosheets were employed as channels in photodetectors, demonstrating outstanding photoelectric performance in the solar-blind ultraviolet range (at 254 and 275 nm) with high responsivity (0.3 A/W), high specific detectivity (5.5 × 109 Jones), rapid response speed (2.6 ms/3.4 ms), and exceptionally low dark current (2 pA). It is noteworthy that these nanosheets exhibit almost no sensitivity to 365 nm and visible light irradiation, attributable to the direct carrier transition beyond the broad bandgap in CdPS3. Furthermore, high-quality imaging was achieved under different gate voltages using 275 nm ultraviolet light, underscoring the potential of CdPS3 as a new material for high-performance SBUV optoelectronic detection.
期刊介绍:
Nano Research is a peer-reviewed, international and interdisciplinary research journal that focuses on all aspects of nanoscience and nanotechnology. It solicits submissions in various topical areas, from basic aspects of nanoscale materials to practical applications. The journal publishes articles on synthesis, characterization, and manipulation of nanomaterials; nanoscale physics, electrical transport, and quantum physics; scanning probe microscopy and spectroscopy; nanofluidics; nanosensors; nanoelectronics and molecular electronics; nano-optics, nano-optoelectronics, and nano-photonics; nanomagnetics; nanobiotechnology and nanomedicine; and nanoscale modeling and simulations. Nano Research offers readers a combination of authoritative and comprehensive Reviews, original cutting-edge research in Communication and Full Paper formats. The journal also prioritizes rapid review to ensure prompt publication.