基于压电谐振隧道结的可切换式高灵敏度应变传感器

IF 9.5 2区 材料科学 Q1 CHEMISTRY, PHYSICAL
Gongwei Hu, Li Zeng, Fobao Huang, Shuaiwei Fan, Qiao Chen, Wei Huang
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引用次数: 0

摘要

物联网和人工智能等新兴技术的发展需要高速、低功耗、高灵敏度和可切换功能的应变传感器,以便在复杂环境中感应微妙的机械刺激。谐振隧穿二极管(RTD)具有超快传输过程、较低的隧穿电流和负差分电阻,是此类传感应用的理想选择。然而,显著提高传感灵敏度仍然是 RTD 相关应变传感器面临的最大挑战之一。在这里,我们利用压电效应来提高双势垒氧化锌纳米线热电阻应变传感器的传感性能。这种应变传感器不仅具有 390 GPa-1 的超高量规因子(GF),比已报道的基于热电阻的应变传感器高出两个数量级,而且还能通过在 0.2 V 的小范围内调节偏置电压,以 160 的 GF 比切换灵敏度、应变介导的极化场(用于操纵量子化子带电平)和界面极化电荷(用于调整空间电荷区)。这两种机制使应变能够诱导负微分电阻、放大峰谷电流比并降低谐振偏置电压。这些性能可通过调节偏置电压、温度和器件结构来实现。此外,还提出了一种应变传感器,它能够在灵敏和不灵敏状态下切换传感性能。这项研究不仅深入探讨了压电调制谐振隧道物理,还推动了热电阻向高灵敏度和多功能传感器应用的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions

A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions

Developing emerging technologies in Internet of Things and artificial intelligence requires high-speed, low-power, high-sensitivity, and switchable-functionality strain sensors capable of sensing subtle mechanical stimuli in complex ambience. Resonant tunneling diodes (RTDs) are the good candidate for such sensing applications due to the ultrafast transport process, lower tunneling current, and negative differential resistance. However, notably enhancing sensing sensitivity remains one of the greatest challenges for RTD-related strain sensors. Here, we use piezotronic effect to improve sensing performance of strain sensors in double-barrier ZnO nanowire RTDs. This strain sensor not only possesses an ultrahigh gauge factor (GF) 390 GPa−1, two orders of magnitude higher than these reported RTD-based strain sensors, but also can switch the sensitivity with a GF ratio of 160 by adjusting bias voltage in a small range of 0.2 V. By employing Landauer–Büttiker quantum transport theory, we uncover two primary factors governing piezotronic modulation of resonant tunneling transport, i.e., the strain-mediated polarization field for manipulation of quantized subband levels, and the interfacial polarization charges for adjustment of space charge region. These two mechanisms enable strain to induce the negative differential resistance, amplify the peak-valley current ratio, and diminish the resonant bias voltage. These performances can be engineered by the regulation of bias voltage, temperature, and device architectures. Moreover, a strain sensor capable of electrically switching sensing performance within sensitive and insensitive regimes is proposed. This study not only offers a deep insight into piezotronic modulation of resonant tunneling physics, but also advances the RTD towards highly sensitive and multifunctional sensor applications.

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来源期刊
Nano Research
Nano Research 化学-材料科学:综合
CiteScore
14.30
自引率
11.10%
发文量
2574
审稿时长
1.7 months
期刊介绍: Nano Research is a peer-reviewed, international and interdisciplinary research journal that focuses on all aspects of nanoscience and nanotechnology. It solicits submissions in various topical areas, from basic aspects of nanoscale materials to practical applications. The journal publishes articles on synthesis, characterization, and manipulation of nanomaterials; nanoscale physics, electrical transport, and quantum physics; scanning probe microscopy and spectroscopy; nanofluidics; nanosensors; nanoelectronics and molecular electronics; nano-optics, nano-optoelectronics, and nano-photonics; nanomagnetics; nanobiotechnology and nanomedicine; and nanoscale modeling and simulations. Nano Research offers readers a combination of authoritative and comprehensive Reviews, original cutting-edge research in Communication and Full Paper formats. The journal also prioritizes rapid review to ensure prompt publication.
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