通过毫秒闪光灯退火实现铁电 Al:HfO2 薄膜的低热预算结晶

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-09-08 DOI:10.35848/1347-4065/ad70bf

Hideaki Tanimura, Yuma Ueno, Tomoya Mifune, Hironori Fujisawa, Seiji Nakashima, Ai I. Osaka, Shinichi Kato and Takumi Mikawa

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引用次数: 0

摘要

我们报告了一种低热预算退火技术--闪灯退火（FLA）--的使用情况，该技术可在毫秒级范围内提供极短的退火时间，从而影响掺铝二氧化铪（HAO）薄膜的铁电特性。与快速热退火（RTA）相比，在 1000 °C 下退火 5 毫秒的 HAO 的剩电位极化值更高，达到 24.9 μC cm-2，而且耐久性没有降低。在使用 FLA 时，GIXRD 显示出源于正方体（o-）相的更强的峰值强度，表明形成了更多的 o-相。我们认为，这是 FLA 低热预算的结果，特别是 FLA 可以最大限度地减少 TiN 电极中压应力的松弛，从而对 HAO 薄膜产生高拉伸应力，从而促进邻相的形成。这些结果表明，由于邻相的形成得到加强，FLA 是一种很有前途的 HAO 结晶退火方法。

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Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing

We report the use of a low-thermal-budget annealing technique; flash lamp annealing (FLA), which provides an extremely short annealing time in the millisecond range, on the ferroelectric properties of Al-doped HfO2 (HAO) films. HAO annealed at 1000 °C with 5 ms shows a higher remanent polarization value of 24.9 μC cm−2 compared to rapid thermal annealing (RTA), without degradation of endurance. GIXRD shows a stronger peak intensity originating from the orthorhombic (o-) phase and is observed when using FLA, indicating the formation of a larger amount of the o-phase. We believe that this is a consequence of the low thermal budget of FLA, and that specifically FLA can minimize the relaxation of the compressive stress in the TiN electrodes, inducing a high tensile stress to the HAO films and therefore an enhancement of o-phase formation. These results indicate that FLA is a promising annealing method for HAO crystallization due to the enhancement of o-phase formation.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS