雾状化学气相沉积法β-(Al x Ga1-x )2O3/β-Ga2O3 超晶格生长演示

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-09-10 DOI:10.35848/1347-4065/ad6f87

Masahiro Kaneko, Hiroki Miyake and Hiroyuki Nishinaka

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引用次数: 0

摘要

本研究展示了利用雾状 CVD 成功生长出具有六个周期的β-(AlxGa1-x)2O3/β-Ga2O3 超晶格结构。高角度环形暗场扫描透射电子显微镜（HAADF-STEM）分析表明，超晶格由六个周期的 β-（AlxGa1-x）2O3/β-Ga2O3 组成，单层厚度分别为 12.9 nm 和 9.1 nm。XRD 分析进一步证实了该结构的周期性，得出的周期为 22.7 nm，与 STEM 结果非常吻合。此外，根据 XRD 峰位置，确定铝的成分为 x = 0.085。原子力显微镜和 HAADF-STEM 观察结果均显示出原子平整的表面和锐利的界面。这一成果凸显了雾状 CVD 在制造复杂氧化物异质结构方面的潜力，为传统方法提供了一种具有成本效益且可扩展的替代方法。这些发现为开发基于宽带隙氧化物的先进电子和光电器件开辟了新途径。

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Demonstration of β-(Al x Ga1−x )2O3/β-Ga2O3 superlattice growth by mist chemical vapor deposition

This study demonstrates the successful growth of a β-(AlxGa1−x)2O3/β-Ga2O3 superlattice structure with six periods using mist CVD. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) analysis revealed that the superlattice consisted of six periods of β-(AlxGa1−x)2O3/β-Ga2O3 with an individual layer thickness of 12.9 nm and 9.1 nm, respectively. XRD analysis further confirmed the periodicity of the structure, yielding a period of 22.7 nm, which is in good agreement with the STEM result. Additionally, the Al composition was determined to be x = 0.085 based on XRD peak positions. Both atomic force microscopy and HAADF-STEM observations revealed atomically flat surfaces and sharp interfaces. This achievement highlights the potential of mist CVD for fabricating complex oxide heterostructures, offering a cost-effective and scalable alternative to conventional methods. The findings open new avenues for developing advanced electronic and optoelectronic devices based on wide-bandgap oxides.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS