用于 NH3 传感和存储的 Sc 和 Ti- 掺杂碳化硅纳米管:一种 DFT 方法

IF 1.6 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER
Banchob Wanno, Thanawat Somtua, Anucha Naowanit, Narin Panya, Wandee Rakrai, Chatthai Kaewtong, Chanukorn Tabtimsai
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引用次数: 0

摘要

氨气(NH3)是一种高度危险的气体,因此需要研究一种高灵敏度的 NH3 分子传感器。利用密度泛函理论计算研究了掺杂 Sc 原子和 Ti 原子的碳化硅纳米管(SiCNT)对 NH3 分子的吸附。研究了吸附能、吸附距离、能隙、化学软硬度、轨道分布、电荷转移和状态密度。计算结果表明,NH3 分子可以通过微弱的物理相互作用吸附在原始 SiCNT 上,这种吸附作用比 NH3 在 Sc 和掺 Ti- 的 SiCNT 上的吸附作用要弱得多。所有 Sc 和掺 Ti 的 SiCNT 都能吸附单个和多个 NH3 分子,其中 NH3/TiSi-SiCNT 系统的吸附能最大,为 - 41.56 kcal/mol。此外,与原始 SiCNT 相比,Sc 和 Ti 掺杂的 SiCNT 对 NH3 分子的吸附距离更短,电荷转移更大。在掺杂位点周围出现的轨道分布可能是由于 NH3 与 SiCNT 之间的强相互作用。与原始 SiCNT 相比,掺入 Sc 和 Ti- 的 SiCNT 的能隙变化更为显著,其中 2NH3/TiC-SiCNT 与裸 TiC-SiCNT 相比,能隙变化最大,约为 22%。掺杂 Sc 和 Ti- 的 SiCNT 的态密度比原始 SiCNT 的态密度有显著变化,在 - 2.5 eV 附近出现了新的杂质态。化学硬度和软度说明稳定性增强,反应活性降低。在 Sc 和 Ti- 掺杂的 SiCNT 表面上,NH3 的解吸恢复时间很短,解吸温度也很合适。因此,掺Sc和钛的SiCNT对NH3分子的敏感性有望成为高灵敏气体传感和存储纳米材料的候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Sc- and Ti-doped silicon carbide nanotubes for NH3 sensing and storage applications: a DFT approach

Sc- and Ti-doped silicon carbide nanotubes for NH3 sensing and storage applications: a DFT approach

Ammonia (NH3) is highly hazardous gases, thus the investigation for a highly sensitive sensor of NH3 molecule is desirable. The adsorptions of NH3 molecule on Sc and Ti atoms doped silicon carbide nanotube (SiCNT) were investigated by using density functional theory calculation. The adsorption energies, adsorption distances, energy gaps, chemical hardness and softness, orbital distributions, charge transfers and density of states were examined. The calculated results display that NH3 molecules can be adsorbed on the pristine SiCNT via a weak physical interaction, which is much weaker than those of NH3 adsorption on Sc and Ti-doped SiCNTs. All of Sc and Ti-doped SiCNTs can absorb single and multiple NH3 molecules with the greatest adsorption energy of − 41.56 kcal/mol for NH3/TiSi–SiCNT system. In addition, there are shorter adsorption distance and larger charge transfer for Sc- and Ti-doped SiCNTs than that of pristine SiCNT with NH3 molecule. The orbital distributions are occurred around the doping site may be due to the strong interaction between NH3 and SiCNT. The energy gaps of Sc- and Ti-doped SiCNTs have much more significant change than that of pristine SiCNT in which 2NH3/TiC–SiCNT show the largest change of energy gap about 22% compared with bare TiC–SiCNT. The density of states of Sc- and Ti-doped SiCNTs show significant shift than that of pristine SiCNT which the new impurity states near the − 2.5 eV is occurred. The chemical hardness and softness illustrate the enhancement stability and decreased the reactivity. A short recovery times and suitable desorption temperatures are observed for the NH3 desorption on Sc- and Ti-doped SiCNT surface. Therefore, sensitivity to NH3 molecule of Sc- and Ti-doped SiCNTs is a promising candidate for highly sensitive gas sensing and storage nanomaterials.

Graphical abstract

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来源期刊
The European Physical Journal B
The European Physical Journal B 物理-物理:凝聚态物理
CiteScore
2.80
自引率
6.20%
发文量
184
审稿时长
5.1 months
期刊介绍: Solid State and Materials; Mesoscopic and Nanoscale Systems; Computational Methods; Statistical and Nonlinear Physics
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